The IXBF42N300 is a high-voltage BiMOSFET transistor rated for 3000 V blocking voltage and 24 A continuous collector current at 110 °C. It is packaged in an ISOPLUS i4-Pak with an isolated mounting surface and a junction-to-case thermal resistance of 0.52 °C/W. The device has a saturation voltage of 2.5 to 3.0 V at 42 A and 15 V gate drive, with a pulsed current capability of 400 A. It includes an intrinsic reverse diode with a forward voltage of 2.5 V and supports a clamped inductive safe operating area up to 1500 V. Switching times are 72 ns for turn-on and 445 ns for turn-off at 25 °C. The transistor operates from -55 °C to 150 °C junction temperature and provides 3000 V~ electrical isolation.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBF42N300 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 3000 volts |
