The CPC3708 is a 350V N-channel depletion mode FET available in SOT-223 and SOT-89 packages, designed for applications such as LED drives, telecommunications, and power supplies. It features a typical on-resistance of 8 Ω at 25°C, a gate-to-source off voltage range of -2 to -3.6 V, and a maximum drain-to-source voltage of 350 V. The SOT-223 package dissipates up to 2.5 W, while the SOT-89 dissipates up to 1.1 W. Thermal impedance is 55 °C/W junction-to-ambient for SOT-223 and 90 °C/W for SOT-89. It meets MSL 1 moisture sensitivity and ESD sensitivity per JESD-625, with a soldering profile compliant to IPC/JEDEC J-STD-020. The device operates from -40 to +110 °C and is not for new designs.
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | CPC3708 |
| Product Name | N-channel depletion mode field effect transistors (FET) |
| Polarity | N-Channel |
