The IXFH42N20 is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It is packaged in a TO-247 AD case with dimensions of 20.32 mm x 16.26 mm x 4.5 mm, featuring an isolated mounting screw hole for easy installation. The device has a drain-source breakdown voltage of 200 V, a continuous drain current of 42 A at 25°C, and a maximum on-resistance of 60 mΩ at 10 V gate voltage. It supports an unclamped inductive switching energy of 30 mJ and has a junction temperature range of -55°C to 150°C. The part meets RoHS standards and exhibits low package inductance with a fast intrinsic rectifier. It is rated for avalanche ruggedness and operates with low gate charge for easy drive circuitry.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH42N20 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
