The IXFH6N100Q is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring avalanche ruggedness and low on-resistance. It comes in a TO-247 AD package measuring 20.80-21.46 mm in length, 15.75-16.26 mm in width, and 5.20-5.72 mm in lead spacing, with a drain tab. It has a maximum drain-source voltage of 1000 V, a continuous drain current of 6 A at 25°C, and a drain-source on-resistance of 1.9 Ω. The device supports an unclamped inductive switching energy of 20 mJ and a peak avalanche energy of 700 mJ. It meets UL 94 V-0 flammability standards and is rated for junction temperatures from -55°C to 150°C. The gate charge is 48 nC, with a total gate-source charge of 17 nC and a total gate-drain charge of 22 nC when tested under specified pulse conditions.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH6N100Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH6N100Q |
| Polarity | N-Channel |
