The IXBA16N170AHV is a high-voltage BIMOSFET IGBT designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It is housed in a TO-263HV package, weighing 2.5 g, and features a 1700 V collector-emitter breakdown voltage, a continuous collector current of 16 A at 25°C, and a maximum collector-emitter saturation voltage of 6.0 V at 10 A and 15 V gate drive. The device includes an anti-parallel diode with a forward voltage of 5.0 V at 10 A and a thermal resistance from junction to case of 0.83 °C/W. Operating junction temperature ranges from -55°C to +150°C. The part supports clamped inductive switching with a safe operating area up to 1350 V and 40 A for non-repetitive pulses. Gate drive requirements are low, enabling simplified drive circuits, and power density is high due to integrated design.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBA16N170AHV |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
