The IXFH16N90Q is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring an avalanche-rated structure and a fast intrinsic rectifier. It is packaged in a TO-247 AD case with a weight of 6 g and a mounting torque specification of 1.13 Nm. The device has a drain-source breakdown voltage of 900 V, a continuous drain current of 16 A at 25°C, and a maximum RDS(on) of 0.65 Ω at 25°C. The gate-source threshold voltage ranges from 3.0 V to 5.0 V. It meets UL 94 V-0 flammability standards and is rated for operation from -55°C to 150°C. The device is suitable for unclamped inductive switching due to its avalanche energy rating of 1.5 J and gate charge of 25 nC.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH16N90Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH16N90Q |
| Polarity | N-Channel |
