The IXBH40N160 is a monolithic N-channel enhancement mode Bipolar MOS transistor designed for high-voltage switching applications, with a collector-emitter voltage rating of 1600 V and a continuous collector current of 33 A at 25°C. It is packaged in a TO-247 AD case with dimensions of 19.81 to 20.32 mm in height, 20.80 to 21.46 mm in width, and 15.75 to 16.26 mm in thickness, featuring an isolated mounting screw hole. The device has a typical collector-emitter saturation voltage of 6.2 V at 20 A and 125°C, and a thermal resistance from junction to case of 0.35 K/W. It includes an intrinsic diode, exhibits fast turn-off characteristics with a fall time of 40 ns, and complies with JEDEC TO-247 AD standards. It is rated for junction temperatures from -55°C to 150°C and meets RoHS requirements.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Insulated Gate Bipolar Transistor, Product overview: IXBH40N160 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBH40N160 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBH40N160 | 279-IXBH40N160 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor |
| VCES | 1600 volts |
