The IXFH50N80XA is an N-channel enhancement mode Power MOSFET rated for 800 V drain-source voltage and 50 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and features a low on-state resistance of 105 mΩ at 25°C, avalanche capability, and a fast intrinsic diode. The device is AEC-Q101 qualified and supports junction temperatures from -55°C to +150°C. It has a maximum power dissipation of 890 W at 25°C case temperature, a thermal resistance of 0.14 °C/W from junction to case, and a transient gate voltage rating of ±40 V. The device exhibits low package inductance and is suitable for high-power density applications requiring reliable switching performance.
IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Space Savings International Standard Package High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH50N80XA |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - Automotive Qualified - Series: Ultra Junction X-Class - IXFH50N80XA |
| Package Type | TO-247; TO-247 |
