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Littelfuse, Inc. 800V Automotive Qualified Ultra Junction X-Class Power MOSFETs IXFH50N80XA

Description
IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Features: International Standard Package High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Benefits: High Power Density Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
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800V Automotive Qualified Ultra Junction X-Class Power MOSFETs - IXFH50N80XA - Littelfuse, Inc.
Chicago, IL, United States
800V Automotive Qualified Ultra Junction X-Class Power MOSFETs
IXFH50N80XA
800V Automotive Qualified Ultra Junction X-Class Power MOSFETs IXFH50N80XA
IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Features: International Standard Package High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Benefits: High Power Density Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls

IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Features: International Standard Package High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Benefits: High Power Density Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls

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Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH50N80XA
Product Name 800V Automotive Qualified Ultra Junction X-Class Power MOSFETs
V(BR)DSS 800 volts
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