The IXFH76N15T2 is an N-channel enhancement mode Power MOSFET in a TO-247 package, rated for 150 V drain-to-source voltage and 76 A continuous drain current at 25°C. It has a maximum RDS(on) of 22 mΩ at 10 V gate-source voltage and 38 A drain current, with an avalanche energy rating of 500 mJ. The device operates with a junction temperature up to 175°C and features a fast intrinsic rectifier, dynamic dv/dt rating of 15 V/ns, and low gate charge. It is Avalanche Rated and meets international standard package requirements. Thermal resistance from junction to case is 0.21 °C/W for the TO-247 package.
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH76N15T2 |
| Product Name | 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
