The IXFH32N100X is an N-channel enhancement mode power MOSFET rated for 1000 V drain-source voltage and 32 A continuous drain current, designed for high-voltage switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and features an avalanche-rated structure, low on-state resistance of 220 mΩ at 25°C, and a maximum junction temperature of 150°C. The device has a gate-source voltage rating of ±30 V, transient gate-source voltage of ±40 V, and a source-drain diode with a forward voltage of 1.4 V. It meets RoHS compliance and is rated for -55°C to 150°C operating temperature range. The device exhibits low package inductance and is rated for 50 V/ns dv/dt capability.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH32N100X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
