The IXFH15N100Q is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring avalanche ruggedness and a fast intrinsic rectifier. It is packaged in a TO-247 AD case, measuring 21.46 mm in length and 16.26 mm in width. The device has a drain-source voltage rating of 1000 V, a continuous drain current of 15 A at 25°C, and a pulsed drain current of 60 A. Its on-state resistance is 0.7 Ω at 10 V gate bias. The thermal resistance junction-to-case is 0.35 K/W, and it supports avalanche energy up to 1.5 J. The package meets UL 94 V-0 flammability standards and is rated for operation from -55°C to 150°C.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH15N100Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH15N100Q |
| Polarity | N-Channel |
