The IXBR42N170 is a high-voltage, high-gain BiMOSFET designed for switched-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It features an ISOPLUS247 package with a 2500 V electrical isolation rating and a maximum collector-emitter voltage of 1700 V. The device can handle a continuous collector current of 32 A at 90°C and a peak current of 300 A for 1 ms. Collector-emitter saturation voltage is 2.9 V at 42 A and 15 V gate drive. Thermal resistance from junction to case is 0.62 °C/W. The IGBT meets isolated mounting surface requirements and operates from -55 °C to +150 °C junction temperature. Reverse diode forward voltage is 2.8 V at 42 A, with reverse recovery time of 1.32 μs under specified conditions.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBR42N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
