The IXFH10N100 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as DC-DC converters, synchronous rectification, and switched-mode power supplies. It is packaged in a TO-247 AD case, measuring 20.80 to 21.46 mm in length and 5.20 to 5.72 mm between lead centers, with a weight of 6 g. It has a drain-source voltage rating of 1000 V, a continuous drain current of 10 A, and a maximum pulsed drain current of 40 A. The on-state resistance is 1.20 Ω at 25°C with a gate-source voltage of 10 V. It supports an unclamped inductive switching energy of 30 mJ and has a maximum junction temperature of 150°C. The device meets the AEC-Q200 automotive qualification standard and features a low package inductance and fast intrinsic rectifier. The gate charge is 122 to 155 nC, and the thermal resistance from junction to case is 0.42 K/W.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH10N100 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH10N100 |
| Polarity | N-Channel |
