Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH16N170A

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Datasheet
Datasheet Summary
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The IXBH16N170A is a monolithic Bipolar MOS transistor designed for high-voltage switching applications, featuring a 1700 V blocking voltage and 16 A continuous collector current at 25°C. It is available in a TO-247 AD package, weighing 6 g, with a maximum junction temperature of 150°C and lead soldering temperature of 300°C for 10 seconds. The device includes a fast reverse diode, low switching losses, and a low on-state saturation voltage of 6.0 V at 16 A. It meets UL 94 V-0 flammability standards and is suited for AC motor control, UPS systems, and capacitor discharge circuits. Switching times are 25 ns turn-on delay and 160 ns turn-off delay at 25°C under specified conditions.

Datasheet Summary
Powered by GS/AI

The IXBH16N170A is a monolithic Bipolar MOS transistor designed for high-voltage switching applications, featuring a 1700 V blocking voltage and 16 A continuous collector current at 25°C. It is available in a TO-247 AD package, weighing 6 g, with a maximum junction temperature of 150°C and lead soldering temperature of 300°C for 10 seconds. The device includes a fast reverse diode, low switching losses, and a low on-state saturation voltage of 6.0 V at 16 A. It meets UL 94 V-0 flammability standards and is suited for AC motor control, UPS systems, and capacitor discharge circuits. Switching times are 25 ns turn-on delay and 160 ns turn-off delay at 25°C under specified conditions.

Suppliers

Company
Product
Description
Supplier Links
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBH16N170A - Littelfuse, Inc.
Rosemont, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBH16N170A
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH16N170A
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

Supplier's Site Datasheet
Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse - 29AK0373 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse
29AK0373
Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse 29AK0373
TRANSISTOR, 1.7KV, 16A, TO-247AD ROHS COMPLIANT: YES

TRANSISTOR, 1.7KV, 16A, TO-247AD ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IXBH16N170A 29AK0373
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse
VCES 1700 volts
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