The IXFK180N07 is an N-channel enhancement mode Power MOSFET with a 70 V drain-source breakdown voltage and 180 A continuous drain current, designed for high-power switching applications such as DC-DC converters, battery chargers, and switch-mode power supplies. It is packaged in a TO-264 case with a thermal resistance of 0.22 °C/W from junction to case. The device features a low RDS(on) of 6 mΩ at 10 V gate voltage and 90 A drain current, an avalanche energy rating of 3 J, and a fast intrinsic rectifier with a reverse recovery time of 250 ns. It is avalanche rated and meets the TO-264 mechanical outline, weighing 10 g. The part operates from -55 °C to +150 °C junction temperature and has a gate-source voltage limit of ±20 V. The device is described as having low package inductance and fast intrinsic rectifier characteristics, consistent with the HiPerFET™ family.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK180N07 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
