D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages
IGBT W/ DIODE; 1.2KV, 50A; ISOPLUS-247; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:200W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXDR30N120D1 | 24M3001 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDR30N120D1 | Igbt W/ Diode; 1.2Kv, 50A; Isoplus-247; Continuous Collector Current Ixys Semiconductor |
| VCES | 1200 volts | |
| VCE(on) | 2.9 volts | |
| IC(max) | 50 amps | |
| Package Type | ISOPLUS247 | TO-3 |
