The IXFH26N50Q is an N-channel enhancement mode power MOSFET designed for high-power switching applications, featuring a TO-247 AD package measuring 20.32 mm in length and 16.26 mm in width. It has a drain-source breakdown voltage of 500 V, a continuous drain current of 26 A at 25°C, and a maximum on-resistance of 0.20 Ω at 10 V gate-source voltage. The device supports unclamped inductive switching with an avalanche energy rating of 30 mJ and can handle transient gate-source voltages up to ±30 V. It meets UL 94 V-0 flammability standards and is rated for junction temperatures from -55°C to 150°C. Thermal resistance from junction to case is 0.42 K/W, and mounting torque is specified at 1.13 Nm (10 lb.in.).
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH26N50Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH26N50Q |
| Polarity | N-Channel |
