Littelfuse, Inc. 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH30N85X

Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet
Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH30N85X - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFH30N85X
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH30N85X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFH30N85X
Product Name 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

80 V, 500 mA PNP general-purpose transistors - BC806-25VL - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; SOT23
View Details
5 suppliers
CSD16401Q5 N-Channel NexFET™ Power MOSFET - CSD16401Q5 - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
8 suppliers
1300A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K3 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Transistor - 204071677 - Radwell International
Fuji Electric Corp. of America
View Details