The IXBF14N300 is a high-voltage BiMOSFET designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in an ISOPLUS i4-Pak with an electrically isolated tab, measuring 5 g in weight. The device has a continuous collector-emitter voltage rating of 3000 V, a peak collector current of 98 A at 25°C for 1 ms, and a maximum junction temperature of 150°C. It features 4000 V~ electrical isolation and a low saturation voltage of 2.2 to 2.7 V at 14 A. Thermal resistance from junction to case is 1.04 °C/W. The part meets RoHS standards and is constructed on a direct-copper bond substrate.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBF14N300 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: Very High Voltage - IXBF14N300 |
| VCES | 3000 volts |
