The IXBX64N250 is a 2500 V monolithic bipolar MOS transistor for high-voltage switching applications such as switch-mode and resonant-mode power supplies. It is packaged in a PLUS247 case, weighing 6 g, with a maximum junction temperature of 150 °C. Continuous collector current is 64 A at 110 °C, with a peak current of 800 A for 1 ms and a power dissipation of 735 W at 25 °C. It includes an anti-parallel diode with a forward voltage of 3.0 V at 64 A and a reverse recovery time of 160 ns. Thermal resistance from junction to case is 0.17 °C/W. Gate-source voltage is limited to ±25 V continuous and ±35 V transient. Switching delay is 49 ns on and 232 ns off at 25 °C with a 1 Ω gate resistor. It meets AEC-Q200 and RoHS standards.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBX64N250 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 2500 volts |
