The IXFA12N50P is an N-channel enhancement mode MOSFET rated for 500V drain-to-source voltage and 12A continuous drain current, packaged in a TO-263 surface-mount case measuring 2.5 g. It has a maximum on-resistance of 500 mΩ at 25°C and is avalanche rated with an energy rating of 600 mJ. The device supports unclamped inductive switching (UIS), features low package inductance, and has a thermal resistance from junction to case of 0.62 °C/W. It complies with AEC-Q200 and RoHS standards and operates from -55°C to +150°C junction temperature. The body diode has a reverse recovery charge of 2.8 μC at 6A and 100V.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA12N50P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
