The IXFH34N65X2W is a 650 V, 34 A, N-channel enhancement mode MOSFET in a TO-247 package, designed for switch-mode power supplies, motor drives, and PFC circuits. It has a drain-source on-resistance of ≤100 mΩ and is avalanche rated with a single pulse avalanche current of 7 A and energy of 1 J. The device features a thermal resistance junction-to-case of 0.23 K/W and a maximum junction temperature of 150 °C. The package measures 20.80-21.34 mm in length and 15.57-16.13 mm in width, with a total weight of 6 g. The gate-source voltage is rated at ±30 V continuous and ±40 V transient.
Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Higher efficiency High power density Easy to mount Space savings
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH34N65X2W |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
