Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFH34N65X2W

Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Higher efficiency High power density Easy to mount Space savings