Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Higher efficiency High power density Easy to mount Space savings
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH34N65X2W |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
