Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXA70R1200NA

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXA70R1200NA is an obsolete 1200 V XPT IGBT in a SOT-227B (minibloc) package, designed for applications such as AC motor drives, solar inverters, and switched-mode power supplies. It has a continuous collector current rating of 100 A at 25°C and 65 A at 80°C, with a collector-emitter saturation voltage of 1.8 V at 50 A and 25°C. The device is short-circuit rated for 10 µs and features a positive temperature coefficient of on-state voltage for easy paralleling. The package has an isolation voltage of 3000 V~ and an epoxy compound meeting UL 94 V-0. Thermal resistance from junction to case is 0.35 K/W for the IGBT and 0.6 K/W for the internal diode. It is RoHS compliant and uses an internally DCB isolated copper base plate.

Datasheet Summary
Powered by GS/AI

The IXA70R1200NA is an obsolete 1200 V XPT IGBT in a SOT-227B (minibloc) package, designed for applications such as AC motor drives, solar inverters, and switched-mode power supplies. It has a continuous collector current rating of 100 A at 25°C and 65 A at 80°C, with a collector-emitter saturation voltage of 1.8 V at 50 A and 25°C. The device is short-circuit rated for 10 µs and features a positive temperature coefficient of on-state voltage for easy paralleling. The package has an isolation voltage of 3000 V~ and an epoxy compound meeting UL 94 V-0. Thermal resistance from junction to case is 0.35 K/W for the IGBT and 0.6 K/W for the internal diode. It is RoHS compliant and uses an internally DCB isolated copper base plate.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXA70R1200NA - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXA70R1200NA
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXA70R1200NA
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXA70R1200NA
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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