The IXFB38N100Q2 is an N-channel enhancement mode power MOSFET rated for 1000V drain-source voltage and 38A continuous drain current, designed for high-frequency switch-mode and resonant-mode power supplies. It is packaged in a PLUS264TM case with a weight of 10 g and features a low on-resistance of 250 mΩ, fast intrinsic reverse recovery time of 300 ns, and avalanche energy rating of 5 J. The device is rated for operation from -55°C to 150°C junction temperature, with thermal resistance from junction to case of 0.14 °C/W and junction to sink of 0.13 °C/W. It is avalanche rated, has low gate charge and low package inductance, and meets the requirements for high dV/dt and unclamped inductive switching. The MOSFET includes a fast intrinsic rectifier and is compatible with clip or spring mounting applications.
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB38N100Q2 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
