The IXFH7N80 is an N-channel enhancement mode MOSFET for high-efficiency switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It is packaged in a TO-247 AD case with dimensions of 20.32 mm maximum length, 21.46 mm maximum width, and 5.49 mm maximum height. It has a drain-source breakdown voltage of 800 V, a continuous drain current of 7 A at 25°C, and a maximum on-state resistance of 1.4 Ω at 10 V gate voltage. The device supports unclamped inductive switching, features a fast intrinsic rectifier, and has a junction temperature range of -55°C to +150°C. It meets international standard package requirements and is rated for a mounting torque of 1.13 Nm. The part is avalanche-rated and has low gate charge and package inductance for ease of driving and protection.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH7N80 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFH7N80 |
| Polarity | N-Channel |
