The IXFH4N100Q is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 4 A continuous drain current, designed for high-power switching applications with avalanche ruggedness and unclamped inductive switching capability. It is packaged in a TO-247 AD case, measuring 20.32 mm in length, 21.46 mm in width, and 5.49 mm in height, with a mounting torque of 1.13 Nm. The device has a maximum on-resistance of 3.0 Ω at 25°C, a peak pulse current of 16 A, and an avalanche energy rating of 20 mJ. Its thermal resistance junction-to-case is 0.8 K/W. The molding compound meets UL 94 V-0 flammability classification. The part is rated for operation from -55°C to 150°C junction temperature.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH4N100Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH4N100Q |
| Polarity | N-Channel |
