Allied Electronics, Inc. Datasheets for Small-Signal Bipolar Transistors (BJT)

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.
Small-Signal Bipolar Transistors (BJT): Learn more

Product Name Notes
Audio Frequency Driver, Silicon Complementaryyy Transistors
BIP C77 NPN 3A 40V
BIP C77 NPN 3A 60V
BIP C77 NPN 3A 80V
BIP C77 NPN 4A 60V
BIP C77 NPN 4A 80V
BIP C77 PNP 3A 80V
BIP C77 PNP 4A 80V
BIP T0218 NPN 10A 100V
BIP T0218 NPN 10A 60V
BIP T0218 NPN 20A 250V FG
BIP T0218 PNP 10A 100V
BIP T0218 PNP 20A 100V FG
BIP T0220 NPN 10A 60V
BIP T0220 NPN 10A 80V
BIP T0220 NPN 15A 60V
BIP T0220 NPN 1A 100V
BIP T0220 NPN 1A 250V
BIP T0220 NPN 1A 400V
BIP T0220 NPN 3A 100V
BIP T0220 NPN 5A 80V
BIP T0220 NPN 8A 100V
BIP T0220 NPN 8A 150V
BIP T0220 NPN 8A 400V
BIP T0220 NPN 8A 60V
BIP T0220 PNP 15A 80V
BIP T0220 PNP 3A 60V
BIP T0220 PNP 3A 80V
BIP T0220 PNP 6A 40V
BIP T0220 PNP 7A 50V
BIP T0220 PNP 7A 70V
BIP T0220 PNP 8A 100V
BIP T0220 PNP 8A 150V
BIP T0220 PNP 8A 400V FG
BIP T0220 PNP 8A 60V
BIP T0220 PNP 8A 80V
BIP T0264 NPN 16A 250V FG, LEAD-FREE
BIP T03 NPN 10A 140V, LEAD-FREE
BIP T03 NPN 15A 120V
BIP T03 NPN 15A 60V
BIP T03 NPN 16A 200V FG, LEAD-FREE
BIP T03 NPN 16A 250V, LEAD-FREE
BIP T03 NPN 20A 140V FG, LEAD-FREE
BIP T03 NPN 25A 60V, LEAD-FREE
BIP T03 NPN 25A 80V, LEAD-FREE
BIP T03 NPN 30A 120V FG
BIP T03 NPN 30A 40V, LEAD-FREE
BIP T03 NPN 30A 90V FG, LEAD-FREE
BIP T03 NPN 50A 120V FG
BIP T03 NPN 50A 80V, LEAD-FREE
BIP T03 PNP 120A 60V FG
BIP T03 PNP 12A 100V, LEAD-FREE
BIP T03 PNP 15A 60V FG, LEAD-FREE
BIP T03 PNP 16A 200V FG, LEAD-FREE
BIP T03 PNP 16A 250V, PB FREE
BIP T03 PNP 20A 140V FG, LEAD-FREE
BIP T03 PNP 25A 80V
BIP T03 PNP 30A 120V FG, LEAD-FREE
General Purpose Transistor, SOT-23 Package Type, 200 mAdc (Max.) Current Collector
Germanium Complementary Transistor Power Output Driver, NPN Transistor Type NPN transistor type The NTE103 (NPN) are Germanium complementary transistors designed for medium speed saturated switching applications.
Germanium Complementaryyy Transistors Medium Power Amplifier 650 mW (Max.) Power Dissipation Designed for use as a medium power amplifier.
Germanium Complementaryyy Transistors, Power Output, Driver, Germanium Material Type
Germanium Mesa Transistor, PNP, for High-Speed Switching Applications, TO18 Package Type
Germanium PNP Transistor Audio Frequency Power Amplifier The NTE121 is a germanium PNP alloy junction transistor in a TO3 type package designed as an audio frequency power output amplifier.
Germanium PNP Transistor Audio Power Amplifier PNP Transistor Polarity Designed for low-power, large signal audio applications.
Germanium PNP Transistor Audio Power Amplifier, High Current Switch Low Collector-Emitter Saturation Voltage: VCE (sat) == 0.5V (Max) @ IC == 5 A The NTE179 is a PNP type germainum...
Germanium PNP Transistor RF-IF Amp, FM Mixer OSC, TO72 The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and...
No PNP Silicon High Voltage Transistor, TO-92 Package, -500 mADC Collector Current
NPN Silicon Complementary Transistors Audio Power Output, Collector-Base Voltage 200 V Recommended for 100W high fidelity audio frequency amplifier output stage
NPN Transistor, 150 V Collector to Emitter Voltage, 180 V Collector to Base Voltage, TO3 Package High collector-emitter sustaining voltage High DC current gain Low collector–emitter saturation voltage Fast switching...
NPN-SI, TRANSISTOR; NPN; 80 VDC (MAX.);5 VDC (MAX.); 8 ADC (MAX.) COLLECTOR
NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package
One Watt High Voltage Transistor, TO-92, PNP, 1.0 W, -55 to +150°C Operating Temperature
PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 4VDC; 30 ADC COLLECTOR; 7.5 ADC IB
PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 7VDC; 4 ADC COLLECTOR; 10 ADC IB; 15W
PNP-SI, TRANSISTOR; PNP; 60VDC; 60VDC; 5VDC; 4 ADC COLLECTOR; 0.1 ADC IB; 40W
RECTIFIER SILICON PRV=1000V IF=1.0A DO-41 CASE
Retriggerable Monostable Multivibrators, 16-Pin DIP Package
Silicon Complementary Transistor Audio Amplifier and Driver, NPN Transistor Type Low collector–emitter saturation voltage +150 °C maximum operating temperature Designed for use in low-frequency power amplification and drive applications.
Silicon Complementary Transistor Audio Power Amplifier, PNP Transistor Type +150 °C maximum operating temperature Designed for use in high power, high fidelity audio frequency amplifier applications.
Silicon Complementary Transistor Audio Power Output, PNP Transistor Type Recommended for 100 W high fidelity audio frequency amplifier output stage
Silicon Complementary Transistor Darlington Power Amplifier, PNP Transistor Type Monolithic construction with built-in base-emitter shunt resistors -65 to +200 °C operating temperature range Silicon complementary darlington transistor designed for general-purpose...
Silicon Complementary Transistor Darlington Power Amplifiers
Silicon Complementary Transistor General Purposes
Silicon Complementary Transistor, -65 to +200°C Operating Junction Temperature High breakdown voltages Low leakage currents Beta usefUL over an extremely wide current range This type package designed primarily for amplifier...
Silicon Complementary Transistor, High Voltage for Video Output, 300 V Collector to Emitter Voltage
Silicon Complementary Transistor, PNP Transistor Type, 120 V Collector to Emitter Voltage +200 °C maximum operating temperature Complementary silicon epitaxial planer transistors designed for use as drivers for high power...
Silicon Complementary Transistor, PNP Transistor Type, 60 V Collector to Emitter Voltage -65 to +200 °C operating temperature range Designed for applications such as medium-speed switching and amplifiers from audio...
Silicon Complementary Transistor Monolithic construction with built-in base-emitter shunt resistors The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier...
Silicon Complementary Transistor Monolithic construction with built-in base-emitter shunt resistors The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general...
Silicon Complementary Transistors Darlington Power Amplifiers
Silicon Complementary Transistors, -65 to +150°C Operating Junction Temperature
Silicon Complementary Transistors, AF Power Amplifier, High Current Switch, NPN Transistor Type Designed for AF power amplifier and high current switching applications.
Silicon Complementary Transistors, Audio Power Amp, Switch, NPN Transistor Type Intended for use in power linear and switching applications.
Silicon Complementary Transistors, Audio Power Amplifier, NPN Transistor Type High breakdown voltage: V (BR) CEO ≥ 80 V Min. High current: IC ≥ 500 mA Low saturation voltage
Silicon Complementary Transistors, Audio Power Amplifier, Switch, NPN Transistor Type Good linearity of hFE Designed for general purpose medium power switching and amplifier applications.
Silicon Complementary Transistors, Audio Power Output and Medium Power Switching High current-gain bandwidth product: fT ≥ 4 MHz Min @ IC ≥ 500 mA (NTE196) Designed for use in general...
Silicon Complementary Transistors, High Voltage, Medium Power Switch, NPN Transistor Type Usable DC current gain to 2.0 ADC Designed for high-speed switching and linear amplifier applications for high-voltage Operational amplifiers,...
Silicon Complementary Transistors
Silicon Complementaryyy Transistors, Audio Output, Video, Driver
Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA Monolithic construction with built-in base-emitter shunt resistor...
Silicon Complementaryyy Transistors, Darlington Power Amplifier Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min Monolithic construction with built-in base-emitter shunt resistors Designed for general-purpose amplifier and low-frequency switching applications.
Silicon Complementaryyy Transistors
Silicon Darlington Transistors
Silicon NPN Transistor Audio Amplifiers
Silicon NPN Transistor Audio Power Amp, -65 to +200°C, TO3 Package Fast turn-off times Designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
Silicon NPN Transistor Audio Power Amp, Switch, 175 W Power Dissipation The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high- speed...
Silicon NPN Transistor General Purpose Audio Amplifiers
Silicon NPN Transistor High Frequency Amplifiers
Silicon NPN Transistor Low Noises
Silicon NPN Transistor, -65 to +150°C Operating Junction Temperature Excellent DC current gain Current gain-bandwidth product The NTE157 is a silicon NPN transistor in a TO126 type package designed for...
Silicon NPN Transistor, 15 A Collector Current
Silicon NPN Transistor, 350 V Collector to Emitter Voltage, 450 V Collector to Base Voltage Silicon epitaxial planar mounted in jedec TO-39 metal case Used in consumer and industrial line-operated...
Silicon NPN Transistor, 400 V Collector to Emitter, 10 A Collector Current
Silicon NPN Transistor, Audio Amplifier, Switch, Silicone Material Type
Silicon NPN Transistor, High Voltage Horizontal Deflection Output, 800 V Collector to Emitter Voltage
Silicon NPN Transistor, High Voltage Video Output, +200°C Operating Junction Temperature
Silicon NPN Transistor, NPN, Collector to Emitter 800 V, Collector Current 10 A
Silicon NPN Transistor, TO220 Type Package, Collector to Emitter 400 V
Silicon NPN Transistors
Silicon PNP Complementary Transistors
Silicon PNP Complementaryyy Transistors
Silicon PNP Power Transistors
Silicon PNP Transistors
Silicon Power Transistor High Power Audio Amplifiers
Silicon Transistor Audio Power Output, PNP Transistor Type, 80 V Collector to Emitter Voltage -65 to +200 °C operating temperature range Ideal for use as a driver, switch and medium-power...
Silicon Transistor High Voltage Horizontal Output for High Definition CRT, NPN Transistor Type +150 °C maximum operating temperature High-definition color display horizontal deflection output.
SS T092 DL XSTR NPN 100V -LEAD FREE
SS T092 DL XSTR NPN 30V -LEAD FREE
SS T092 GP XSTR NPN 25V -LEAD FREE
SS T092 GP XSTR NPN 30V -LEAD FREE
SS T092 GP XSTR NPN 400V -LEAD FREE
SS T092 GP XSTR NPN 40V -LEAD FREE
SS T092 GP XSTR NPN 60V -LEAD FREE
SS T092 GP XSTR PNP 150V -LEAD FREE
SS T092 GP XSTR PNP 40V -LEAD FREE
SS T092 GP XSTR PNP 60V -LEAD FREE
SS T092 HC XSTR NPN 60V -LEAD FREE
SS T092 LN XSTR PNP 50V -LEAD FREE
SS T092 RF XSTR NPN 160V -LEAD FREE
T-NPN SI HI CURRENT AMP
T-NPN SI-PWR DARL HV AMP
TO-92 Package Type, 12 V Collector to Emitter Voltage, Silicon NPN Transistor
TRANSISTOR NPN SILICON 150V IC=5A TO-39CASE
TRANSISTOR NPN SILICON 30V 0.05A TO-106RF/IF AMP
TRANSISTOR NPN SILICON 70VC IC=10A TO-3P CASE DARLNGTON DRIVER TF=1.8US
TRANSISTOR PNP GP SS 200MA 40V, TO-92 PKG
TRANSISTOR, AMPLIFIER; PNP; 60 VDC; 80 VDC; 5 VDC; 2 A (CONTINUOUS); TONOT=92
Transistor, Bipolar; NPN Bipolar; Silicon; CASE 340D-02; 100; 100; 5; 160W, PBF
TRANSISTOR, BIPOLAR; NPN BIPOLAR; SILICON; TO-220 AB; 100; 100; 5; 0.4 ADC IB
TRANSISTOR, BIPOLAR; NPN BIPOLAR; SILICON; TO-220 AB; 100; 100; 5; 2 ADC IB
Transistor, Bipolar; NPN Bipolar; Silicon; TO-220 AB; 60; 60; 5; 1 Adc IB; 40W
TRANSISTOR, BIPOLAR; NPN BIPOLAR; SILICON; TO-220 AB; 80; 7; 15 ADC COLLECTOR
Transistor, Bipolar; NPN Bipolar; Silicon; TO-220; 250; 250; 5; 8 Adc Collector
TRANSISTOR, BIPOLAR; NPN BIPOLAR; SILICON; TO-220AB; 120; 120; 5; 2 ADC IB; 50W
Transistor, Bipolar; NPN Bipolar; Silicon; TO-220AB; 400; 9; 4 Adc Collector,PBF
TRANSISTOR, HIGH VOLTAGE; TO-92; PNP; -300VDC; -300VDC; -5.0VDC; -55C; +150C
TRANSISTOR, MEDIUM-POWER; PNP; 100VDC; 100VDC; 5VDC; 5 ADC COLLECTOR; 120MADC IB
TRANSISTOR, NPN AUDIO 1A 80V, SOT-223 PKG
TRANSISTOR, NPN GP SS 600MA 40V TO-92 PKG
TRANSISTOR, NPN GP SS 600MA 40V, SOT-23
Transistor, NPN, 60 V(CEO), 500 mA, TO-92 Pb-Free
TRANSISTOR, NPN, 8A, 60V, T0-220 PKG
Transistor, NPN, Switching, 40 V(CEO), 6 V(EBO), 600 mA, SOT23
Transistor, PNP, 60 V(CEO), 500 mA, TO-92 Pb-Free
Transistor, PNP, 80 V(CEO), 500 mA, TO-92 Pb-Free
TRANSISTOR, POWER; NPN; TO-220AB; 60; 5; 10 ADC COLLECTOR; 2 W @ 25C
TRANSISTOR, SILICON; NPN BIPOLAR; TO-220 AB; 90; 80; 5; 15 ADC COLLECTOR; 75W
TRANSISTOR, SILICON; SOT-323; NPN; 40; 60; 6; 200 COLLECTOR; -55 TO +150; 833
TRANSISTOR, SILICON; TO-92; NPN BIPOLAR; 300; 300; 6; 500 COLLECTOR; 200; 83.3
TRANSISTOR, SWITCHING; NPN; 40; 75; 6.0VDC (OPEN COLLECTOR); 600 COLLECTOR
TRANSISTOR; 150MW DISSIPATION; SOT-363
TRANSISTOR; 300MW DISSIPATION; SOT-23
Transistor; Bipolar; PNP; ComplementaryHigh-Power; T03; 15A; 120V CEO
TRANSISTOR; NPN; 100; 100; 7.0; 4 ADC COLLECTOR; 10 ADC IB; 15W; 15 HFE MIN.
TRANSISTOR; NPN; 250; 400; 5; 16 ADC COLLECTOR; 5 ADC IB; 250W; 15 HFE MIN.
Transistor; NPN; 60; 100; 80; 30 Collector; 15 IB; 150W; 10 mAdc, PBF
TRANSISTOR; NPN; 80; 100; 7; 3 COLLECTOR; 1 IB; 1.5W; 83.4C/W (MAX.); 1.7
Transistor; NPN; 80VDC; 5VDC; 10 Adc Collector; 2.0 W @ 25C; 62.5C/W (Max.) pbf
TRANSISTOR; NPN; SILICON; TO-220AB; 250; 400; 8; 8 COLLECTOR; 2.5 IB; 2W; 62.5
TRANSISTOR; NPN; TO-220AB; 100; 100; 5.0; 5 ADC COLLECTOR; 120 IB; 2W
TRANSISTOR; NPN; TO-220AB; 80; 70; 5; 7A COLLECTOR; 3A IB; 40 W @ 25C
TRANSISTOR; NPN; TO-220AB; 80; 80; 5; 10 ADC COLLECTOR; 250 IB; 65 W @ 25C
Transistor; PNP; 250 VDC (Max.); 250 VDC (Max.); 5.0 VDC (Max.); 10 HFE Min.PBF
TRANSISTOR; PNP; 80VDC; 100VDC; 7.0VDC;3.0 ADC COLLECTOR; 1.0 ADC IB; 10C/W
Transistor; PNP; 80VDC; 80VDC; 5.0VDC; 50 Adc Collector; 15 Adc IB; 0.584C/W pbf
TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.);60 VDC (MAX.); 6.0 VDC (MAX.)
TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.);75 VDC (MAX.); 6.0 VDC (MAX.); -55
TRANSISTOR; SOT-23; PNP; 60V; 0.6 COLLECTOR
Transistor; SS T092 RF Transistor NPN 160V -Lead Free
Transistor; TO-92; NPN; 30 VDC (Max.); 30 VDC (Max.); 10 VDC (Max.), PBF
TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)
Transistor; TO-92; NPN; 80; 80; 5.0; 500 Collector; -55 to +150; 80 VDC, pbf
TRANSISTOR; TO-92; PNP; 40; 40; 5.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)