NTE Electronics, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE270

Description
TRANS NPN DARL 100V 10A TO3PN
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE270 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Transistor Polarity Nte Electronics - 05H5697 - Newark, An Avnet Company
    Newark, An Avnet Company
  • TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 - 70215887 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Datasheet
Description
TRANS NPN DARL 100V 10A TO3PN
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE270 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NTE270
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE270
TRANS NPN DARL 100V 10A TO3PN

TRANS NPN DARL 100V 10A TO3PN

Supplier's Site
Transistor Polarity Nte Electronics - 05H5697 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Nte Electronics
05H5697
Transistor Polarity Nte Electronics 05H5697
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:1000hFE RoHS Compliant: Yes

Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:1000hFE RoHS Compliant: Yes

Supplier's Site Datasheet
TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 - 70215887 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271
70215887
TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 70215887
Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA Monolithic construction with built-in base-emitter shunt resistor Designed for general purpose amplifier and low frequency switching applications.

Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity

  • Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA
  • Monolithic construction with built-in base-emitter shunt resistor
    Designed for general purpose amplifier and low frequency switching applications.
Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited Newark, An Avnet Company Allied Electronics, Inc.
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number NTE270 05H5697 70215887
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor Polarity Nte Electronics TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271
Packing Method Bag
IC(max) 10000 milliamps
VCEO 100 volts
Transistor Type Transistor Polarity Nte Electronics
Package Type TO-3 TO-218
Unlock Full Specs
to access all available technical data