NTE Electronics, Inc. TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 NTE270

Description
Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA Monolithic construction with built-in base-emitter shunt resistor Designed for general purpose amplifier and low frequency switching applications.
  • TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 - 70215887 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE270 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Transistor Polarity Nte Electronics - 05H5697 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA Monolithic construction with built-in base-emitter shunt resistor Designed for general purpose amplifier and low frequency switching applications.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 - 70215887 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271
70215887
TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 70215887
Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA Monolithic construction with built-in base-emitter shunt resistor Designed for general purpose amplifier and low frequency switching applications.

Silicon Complementaryyy Transistors, Darlington Power Amp, Switch, PNP Bipolar Transistor Polarity

  • Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min @ 30 mA
  • Monolithic construction with built-in base-emitter shunt resistor
    Designed for general purpose amplifier and low frequency switching applications.
Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE270 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NTE270
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE270
TRANS NPN DARL 100V 10A TO3PN

TRANS NPN DARL 100V 10A TO3PN

Supplier's Site
Transistor Polarity Nte Electronics - 05H5697 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Nte Electronics
05H5697
Transistor Polarity Nte Electronics 05H5697
Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:1000hFE RoHS Compliant: Yes

Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:1000hFE RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Allied Electronics, Inc. Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 70215887 NTE270 05H5697
Product Name TRANSISTOR NPN SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE271 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor Polarity Nte Electronics
Polarity NPN; PNP
Package Type TO-218 TO-3
PD 125000 milliwatts
hfe 500
TJ -65 to ? C (-85 to ? F)
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