Allied Electronics, Inc. Datasheets for Memory Chips
Memory chips are internal storage areas in computers. Although the term "memory chip" commonly refers to a computer's random access memory (RAM), this product area includes many different types of electronic data storage. Computer memory stores data electronically in cells. Without memory chips, a computer could not read programs or retain data.
Memory Chips: Learn more
| Product Name | Notes |
|---|---|
| Features: Automatic ERAL Before WRAL Self-Timed Erase and Write Cycle Power On/Off Data Protection Circuitry Sequential Read Function Industry Standard 3-Wire Serial I/O | |
| Features: Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function HOLD Pin Software Enabled Block Write Protection Hardware Write-Protect Pin Supports SPI Modes 0,3 | |
| Features: Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function HOLD Pin Software Enabled Block Write Protection Hardware Write-Protect Pin Supports SPI Modes 0,3 | |
| Features: Self-Timed Write Cycle and Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function | |
| Patlites SDV-128P SD Memory Card for all BD,BDv,LKEH, and WG Series | |
| The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory... | |
| The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single... | |
| 1 Mbit UV and OTP EPROM, 5 V Supply Voltage, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature... | |
| 1 Mbit UV EPROM, 5 V Supply Voltage, FDIP32W Package, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature... | |
| 1-W EEPROM 1KB, TSOC | |
| 1-W EEPROM 4KB 8-SOIC | |
| 1024K, 128K X 8 , 1.8V SER EE IND | |
| 1024K, 128K X 8, 2.5V HI-SPD SER EE, 128 BYTE PAGE | |
| 10MS 8 PIN SOIC LEAD/HALO FREE IND TEMP | |
| 10MS 8 SOIC LD/HLGN FREE IND TEMP 2.7V | |
| 16K, 2K X 8 2.5V SERIAL EE, IND | |
| 256 Kbit Memory UV EPROM, PDIP28 Package Type, -40 to +85°C Operating Temperature 100 μs⁄word Programming time It is ideally suited for microprocessor systems and is organized as 32,768 by... | |
| 256K (32KX8) 3.3V FAST ASYNC SRAM | |
| 256K, 32K X 8, 2.5V HI-SPEED SER EE, IND, PDIP-8 | |
| 256K, 32K X 8, 2.5V SER EE, IND | |
| 4KX8 STD-PWR, 32K, 5V DUAL-PORT RAM | |
| 5 V, 256 kbit (32 kb x8) Timekeeper® SRAM -0.3 to 7 Supply Voltage Integrated, ultra low power SRAM, real time clock, power-fail Control circuit and battery Bytewide™ ram-like clock... | |
| 512k, 64K X 8 , 1.8V SER EE IND PDIP-8 | |
| 64k, 8K X 8 , 2.5V SER EE IND | |
| 8M (1MX8/512KX16) 3V, BOOT BLOCK, BOT, TSOP48 | |
| DATAFLASH, 16M 2.5V 8SOIC | |
| E-EPROM 1K (24C01) SO 08 .15 JED | |
| EEPROM, 3V 1M 200NS 32TSOP PKG | |
| EPROM OTP 512K PLCC32 | |
| EPROM, 1M 70NS OTP 32DIP | |
| EPROM, 256K 70NS OTP 28DIP | |
| EPROM, 2M (256K X 8), 5V, OTP 55NS, PDIP | |
| EPROM, 4M 90NS OTP 32DIP | |
| EPROM, 4M OTP 44PLCC | |
| EPROM, 512K 70NS OTP 32PLCC | |
| EPROM, 512K OTP 28DIP | |
| FLASH MEMORY, 32M 3V 48TSOP PKG | |
| IC EEPROM 256K 150NS 28DIP | |
| IC EEPROM 64K 150NS 28DIP | |
| IC EEPROM 64K 150NS 32PLCC | |
| IC EPROM 1M 70NS OTP 32PLCC | |
| IC EPROM 256K 70NS OTP 32PLCC | |
| IC EPROM 512K 70NS OTP 28DIP | |
| IC EPROM 64KX16 70NS OTP 44PLCC | |
| IC Eprom, 64K X 16, 70NS, OTP, 40DIP | |
| IC SRAM NV 64K 5% 150NS 28-DIP | |
| INTEGRATED CIRCUIT 64K EPROM NMOS 200NS28-LEAD DIP UV ERASABLE | |
| Integrated Circuit EPROM, 256 Kbit, - 40 to +125°C 5V ±10% supply voltage in read operation Low power “CMOS” consumption - Active Current 30mA at 5MHz Programming Time: 100μs⁄Word The... | |
| Integrated Circuit UV EPROM, 64 Kbit, ± 10 μA (Max.) Leakage Input current, -40 to +125°C 5V ±10% supply voltage in read operation Low power “CMOS” consumption: - active current... | |
| M25P32 T7YSO 16 .30 LARGE JEDEC MS-013 | |
| M25P80 CMOST7X 2P-3MSO 08 WIDE .208 (EIAJ) | |
| Memory, Non Volatile RAM; 16 Kbit SRAM;4.75 to 5.5V; 100; PCDIP24; 3mA Standby | |
| Memory, Non Volatile RAM; 16 Kbit SRAM;4.75 to 5.5V; 150; PCDIP24; 3mA Standby | |
| Memory, Non-Volatile SRAM (NVSRAM); 256KBIT; 120nS; DIP-28 | |
| Memory; 16k Nonvolatile SRAM; 200 ns; 5V (Typ.); 85 mA; 200 ns; 200 ns; 1.5 V | |
| Memory; 256 Kbit; 4.5 to 5.5V; 70; PCDIP28; 0.8 V (Max.); 2.2 V (Min.); 0; 70 | |
| MEMORY; 256K NONVOLATILE SRAM; 120 NS; 5 V (MAX.); 85 MA (MAX.); 120 NS; 120 NS | |
| MEMORY; 256K NONVOLATILE SRAM; 150 NS; 5 V (MAX.); 85 MA (MAX.); 150 NS; 150 NS | |
| MEMORY; 256K NONVOLATILE SRAM; 200 NS; 5 V (MAX.); 85 MA (MAX.); 200 NS; 200 NS | |
| MEMORY; 2KBIT EEPROM; 2.5 V (MIN.); 10MS; SO8; 0.7 V (MIN.); -0.45 V (MIN.) | |
| MEMORY; 4KBIT EEPROM; 2.5 V (MIN.); 10MS; SO8; 0.7 V (MIN.); -0.45 V (MIN.) | |
| Memory; 64k Nonvolatile SRAM; 150 ns; 5V (Typ.); 85 mA (Max.); 150 ns; 150 ns | |
| Memory; 64Kbit SRAM; 4.5 to 5.5 V; 150;PCDIP 28 pin; -0.3 V (Min.); 2.2 V (Min. | |
| Memory; 64Kbit SRAM; 4.75 to 5.5 V; 150; PCDIP28; -0.3 V (Min.); 2.2 V (Min.); 0 | |
| Memory; Nonvolatile RAM 64KBITS; 4.5 to5.5 V; 100; PCDIP28; 0.8 V (Max.); 0 | |
| Memory; ROM; 64; 64x1; Silicon Serial Number, 1-Wire Output, TO-92 | |
| NONVOLATILE SRAM; 256 K NONVOLATILE SRAM; 100 NS; 5.0 V (TYP.); 85 MA (MAX.) | |
| RAM 3.3V PCAP 120NS | |
| RAM NV 16K-10% VTP-200NS | |
| RAM NV 16K-5% VTP 200NS | |
| RAM NV 1MEG 120NS LF | |
| RAM NV 64K-10% VTP -200NS | |
| RAM NV 64K-5% VTP -200N | |
| RAM, Nonvolatile; 1024k Nonvolatile SRAM; 120 ns; V (Typ.); 85 mA (Max.) | |
| SERIAL EEPROM 1KBIT 5.5V, 8 PIN SOIC | |
| SERIAL EEPROM, 1.8V, 8 PIN SOIC | |
| SERIAL FLASH 1MEG (M25P10) SO 08 .15 | |
| Silicon Serial Number, 1-Wire Output, SOT-223 | |
| SRAM, Nonvolatile, 128k x 8, 100 nS, DIP32 | |
| SRAM, Nonvolatile, 2k x 8, 200 nS, DIP28 | |
| SRAM, Nonvolatile, 2Kx8, 100 nS, DIP24 | |
| SRAM, Nonvolatile, 32K x 8, 70 nS, EDIP28 | |
| SRAM, Nonvolatile, 8k x 8, 150 nS, -40 to 85 C, DIP28 | |
| SRAM, Nonvolatile, 8k x 8, 150 nS, DIP28 | |
| SRAM, Nonvolatile, 8k x 8, 85 nS, DIP28 | |
| SRAM, Nonvolatile; 28 Pins; 5 V (Typ.)Supply; 5 pF (Typ.) Load; 2 mA (Min.) | |
| SRAM; 16 Kbit SRAM; -0.3 to 7V; 150; PCDIP24; 0.8 V (Max.); 0.3 V (Max.); 0 | |
| The Microchip Technology Inc. 24AA65/24LC65/24C65 (24XX65)* is a "smart" 8K x 8 Serial Electrically Erasable PROM. This device has been developed for advanced, low-power applications such as personal communications, and... | |
| The Microchip Technology Inc. 24C02C is a 2K bit Serial Electrically Erasable PROM with a voltage range of 4.5V to 5.5V. The device is organized as a single block of... | |
| The Microchip Technology Inc. 93XX46A/B/C devices are 1K bit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels... |