STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Single - 2N3439 2N3439

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1123720-2N3439 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 15MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Status: Obsolete Temperature Range - Operating: 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 20μA Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Family Part Number: 2N3439 Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V Maximum Power: 1W
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1123720-2N3439 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 15MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Status: Obsolete Temperature Range - Operating: 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 20μA Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Family Part Number: 2N3439 Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V Maximum Power: 1W
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N3439 - 1123720-2N3439 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3439
1123720-2N3439
TRANSISTORS - Transistors (BJT) - Single - 2N3439 1123720-2N3439
Manufacturer: STMicroelectronics Win Source Part Number: 1123720-2N3439 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 15MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Status: Obsolete Temperature Range - Operating: 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 20μA Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Family Part Number: 2N3439 Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V Maximum Power: 1W

Manufacturer: STMicroelectronics
Win Source Part Number: 1123720-2N3439
Packaging: Tray
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 15MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Status: Obsolete
Temperature Range - Operating: 200°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 350V
Current - Collector Cutoff (Maximum): 20μA
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
Family Part Number: 2N3439
Manufacturer Pack Quantity: 100
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V
Maximum Power: 1W

Buy Now
Single Bipolar Transistors - 497-2576-5-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-2576-5-ND
Single Bipolar Transistors 497-2576-5-ND
Bipolar (BJT) Transistor NPN 350V 1A 15MHz 1W Through Hole TO-39

Bipolar (BJT) Transistor NPN 350V 1A 15MHz 1W Through Hole TO-39

Buy Now Datasheet
Single Bipolar Transistors - 2N3439 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2N3439
Single Bipolar Transistors 2N3439
TRANS NPN 350V 1A TO39

TRANS NPN 350V 1A TO39

Supplier's Site Datasheet
TRANSISTOR, SILICON; NPN; 350VCE; 450VCB; 7VEB; 1A ICC; 0.5A IB; 10 W @25 C - 70014171 - Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR, SILICON; NPN; 350VCE; 450VCB; 7VEB; 1A ICC; 0.5A IB; 10 W @25 C
70014171
TRANSISTOR, SILICON; NPN; 350VCE; 450VCB; 7VEB; 1A ICC; 0.5A IB; 10 W @25 C 70014171
Silicon NPN Transistor, 350 V Collector to Emitter Voltage, 450 V Collector to Base Voltage Silicon epitaxial planar mounted in jedec TO-39 metal case Used in consumer and industrial line-operated applications. Particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

Silicon NPN Transistor, 350 V Collector to Emitter Voltage, 450 V Collector to Base Voltage

  • Silicon epitaxial planar mounted in jedec TO-39 metal case
    Used in consumer and industrial line-operated applications. Particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Allied Electronics, Inc.
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1123720-2N3439 497-2576-5-ND 2N3439 70014171
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3439 Single Bipolar Transistors Single Bipolar Transistors TRANSISTOR, SILICON; NPN; 350VCE; 450VCB; 7VEB; 1A ICC; 0.5A IB; 10 W @25 C
Polarity NPN NPN NPN; NPN NPN
Package Type TO-3; TO-39; SOT3 TO-3; TO-39; TO-205AD, TO-39-3 Metal Can TO-39; TO-205AD, TO-39-3 Metal Can TO-39
Packing Method Tray; Tray
TJ 200 C (392 F) 200 C (392 F)
Power Gain 40 dB
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