onsemi Single Bipolar Transistors 2N6052G

Description
Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)
  • Single Bipolar Transistors - 2N6052GOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2N6052G - 762279-2N6052G - Win Source Electronics
    Win Source Electronics
  • Transistor - 18710514 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6052G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • BIP T03 PNP 12A 100V, LEAD-FREE - 70099774 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • TRANS PNP DARL 100V 12A TO3 - 598-2N6052G - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N6052GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6052GOS-ND
Single Bipolar Transistors 2N6052GOS-ND
Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N6052G - 762279-2N6052G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6052G
762279-2N6052G
TRANSISTORS - Transistors (BJT) - Single - 2N6052G 762279-2N6052G
Manufacturer: ON Semiconductor Win Source Part Number: 762279-2N6052G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 150W Transistor Type: PNP - Darlington Family Name: 2N6052 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 6A, 3V Alternative Parts (Cross-Reference): 2N6052 PBFREE; 2N6052 Lead Free; 2N6052; ; Introduction Date: September 25, 1998 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762279-2N6052G
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-204AA, TO-3
Power - Max: 150W
Transistor Type: PNP - Darlington
Family Name: 2N6052
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 12A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 6A, 3V
Alternative Parts (Cross-Reference): 2N6052 PBFREE; 2N6052 Lead Free; 2N6052; ;
Introduction Date: September 25, 1998
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 18710514 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
18710514
Transistor 18710514
POWER BIPOLAR TRANSISTOR, 12A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-3, METAL, 2 PIN, ROHS. FREE 2 YEAR RADWELL WARRANTY

POWER BIPOLAR TRANSISTOR, 12A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-3, METAL, 2 PIN, ROHS. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
2N6052G
Darlington Transistors 2N6052G
Darlington Transistors 12A 100V Bipolar Power PNP

Darlington Transistors 12A 100V Bipolar Power PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6052G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6052G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6052G
TRANS PNP DARL 100V 12A TO204

TRANS PNP DARL 100V 12A TO204

Supplier's Site
BIP T03 PNP 12A 100V, LEAD-FREE - 70099774 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
BIP T03 PNP 12A 100V, LEAD-FREE
70099774
BIP T03 PNP 12A 100V, LEAD-FREE 70099774
BIP T03 PNP 12A 100V, LEAD-FREE

BIP T03 PNP 12A 100V, LEAD-FREE

Supplier's Site
TRANS PNP DARL 100V 12A TO3 - 598-2N6052G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANS PNP DARL 100V 12A TO3
598-2N6052G
TRANS PNP DARL 100V 12A TO3 598-2N6052G
TRANS PNP DARL 100V 12A TO3

TRANS PNP DARL 100V 12A TO3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. Utmel Electronic Limited
Product Category Transistors Transistors RF Transistors Darlington Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 2N6052GOS-ND 762279-2N6052G 18710514 2N6052G 2N6052G 70099774 598-2N6052G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N6052G Transistor Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) BIP T03 PNP 12A 100V, LEAD-FREE TRANS PNP DARL 100V 12A TO3
Polarity PNP PNP PNP PNP; PNP
Package Type TO-3; TO-204AA, TO-3 TO-3; SOT3 TO-204AA (TO-3)
Packing Method Tray
IC(max) 12000 milliamps
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