Allied Electronics, Inc. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB...
Features: Generation 4 Warp Speed IGBT Technology HEXFRED® Antiparallel Diodes with Ultrasoftreverse Recovery Very Low Conduction and Switching Losses Optional SMD Thermistor (NTC) Very Low Junction to Case Thermal Resistance...
Features: Over Temperature Shutdown Short Circuit Protection Active Clamp Open Load Detection Logic Ground Isolated from Power Ground ESD Protection
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of...
Specifically designed for Automotive applications, ID = 75A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C...
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for...
Devices Also Available without Free-Wheeling Diode
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
30V DUAL N-CHANNEL HEXFET POWER MOSFET IN A MICRO 8 PACKAGE
50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
80V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
BIP C77 NPN 3A 40V
BIP C77 NPN 3A 60V
BIP C77 NPN 3A 80V
BIP C77 NPN 4A 60V
BIP C77 NPN 4A 80V
BIP C77 PNP 3A 80V
BIP C77 PNP 4A 80V
BIP T0220 NPN 10A 80V
BIP T0220 NPN 15A 60V
BIP T0220 NPN 8A 100V
BIP T0220 PNP 15A 80V
BIP T0220 PNP 7A 50V
BIP T0220 PNP 7A 70V
BIP T0220 PNP 8A 100V
BIP T0220 PNP 8A 60V
BIP T03 NPN 10A 140V, LEAD-FREE
BIP T03 NPN 15A 60V
BIP T03 NPN 20A 90V, LEAD-FREE
BIP T03 NPN 25A 60V, LEAD-FREE
BIP T03 NPN 25A 80V, LEAD-FREE
BIP T03 NPN 30A 40V, LEAD-FREE
BIP T03 NPN 50A 80V, LEAD-FREE
BIP T03 PNP 12A 100V, LEAD-FREE
BIP T03 PNP 25A 80V
Bipolar Transistor; N Channel; 375dc 200v
Complementary Silicon Power Transistors, NPN Transistor Type, 60 V Collector to Emitter Voltage Silicon planar epitaxial mounted in jedec metal case Used for power switching circuits, series and shunt regulators,...
DARLINGTON TRANSISTOR ARRAY, 16 PIN SOIC
DARLINGTON TRANSISTOR ARRAY, 18 PIN SOIC
Darlington Transistor Array, Collector Cutoff Current 50 μA, 0 to +70°C High voltage outputs Output clamp diodes Inputs compatible with various types of logic The SN75468 is a high voltage,...
General Purpose Amplifier, 80 V Collector-Emitter Voltage, 140 V Collector to Base Voltage Silicon planar epitaxial mounted in jedec TO-18 metal case Used for small signal, low noise industrial applications.
High Speed Switch NPN Transistors
High-Voltage High-Current Darlington Transistor Arrays, 30 V Input Voltage High voltage outputs Output clamp diodes Inputs compatible with various types of logic These are high-voltage, high-current darlington transistor arrays. Each...
MOSFET, 55V, 140A, 8 MOHM, 100 NC QG, TO-220AB
MOSFET, N Ch., 30V, 87A, 6.3 MOHM, 17 NC QG, D2-PAK, Pb-Free
MOSFET, N Ch., 40V, 320A, 1.6 MOHM, 170NC QG, D2-PAK 7-PIN, Pb-Free
MOSFET, N-CHANNEL 60V 7.5R, SOT23 PKG
MOSFET, P-CHANNEL, -30V, 7.5A, 19 MOHM,SO-8
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 17 Milliohms;ID -8A;SO-8;PD 2W;gFS 12S
MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 28A;TO-220AB;PD 150W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;D2Pak;PD 70W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
MOSFET, Power;N-Ch;VDSS 100VDC;RDS(ON) 5 Ohms;ID 0.17A;SOT-23 (TO-236);PD 225mW
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 5.2A;TO-220AB;PD 50W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 3.3A;TO-220AB;PD 36W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.28Ohm;ID 14A;TO-220AB;PD 125W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.06Ohm;ID 15A;SO-8;PD 2.5W;VGS +/-12V;gFS 4
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.3Milliohms;ID 210A;TO-220AB;PD 230W;-55de
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5 Milliohms;ID 18A;SO-8;PD 3.1W;VGS +/-12V
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.55Ohm;ID 10A;TO-220AB;PD 125W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.55Ohm;ID 10A;TO-220AB;PD 125W;VGS +/-30V
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-20V;-55
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 202A;TO-220AB;PD 333W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8A;TO-220AB;PD 125W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8A;TO-220AB;PD 125W;VGS +/-30V
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.4 Ohms;ID 5A;TO-220AB;PD 74W;VGS +/-30V
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 3 Ohms;ID 2.5A;TO-220AB;PD 50W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 50VDC;RDS(ON) 3.5 Ohms;ID 200mA;SOT-23 (TO-236);PD 225mW
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 169A;TO-220AB;PD 330W;-55de
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 1.8Ohms;ID 0.2A;SOT-23-3L;PD 0.35W;VGS +/-1
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 1.8Ohms;ID 0.35A;TO-92;PD 1W;VGS +/-18V;-55
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;D2Pak;PD 110W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 12 Milliohms;ID 55A;MZ;PD 89W;VGS +/-20V;-40
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-220AB;PD 200W;VGS +/-20
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.117Ohm;ID -23A;TO-220AB;PD 140W;VGS +/-2
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;D2Pak;PD 79W;VGS +/-20V;-55
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -19A;TO-220AB;PD 150W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.3Ohm;ID -12A;TO-220AB;PD 88W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.6Ohm;ID -6.8A;TO-220AB;PD 60W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 1.2 Ohms;ID -4A;TO-220AB;PD 43W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.005Ohm;ID +/-16A;SO-8;PD 2.5W;VGS +/-12V
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;TO-220AB;PD 110W;VGS +/-20
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 120 Milliohms;ID -27A;TO-220AB;PD 250W
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 1.5 Ohms;ID -3.5A;TO-220AB;PD 40W;VGS +/-2
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS +/-12V
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.085Ohm;ID -4A;TSOP-6;PD 2W;VGS +/-20V;-55
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 0.015Ohm;ID -10.5A;SO-8;PD 2.5W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;D2Pak;PD 200W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;TO-220AB;PD 200W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 20Milliohms;ID -70A;D2Pak;PD 170W;VGS +/-2
MOSFET, Power;P-Ch;VDSS 50VDC;RDS(ON) 5Ohms;ID 130mA;SOT-23 (TO-236);PD 225mW
MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 5 Ohms;ID 200mA;TO-92 (TO-226);PD 350mW;-55degc
MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 7.5 Ohms;ID +/-115mA;SOT-23 (TO-236);PD 225mW;-55
MOSFET;N-Ch;VDSS 90VDC;RDS(ON) 1.8 Ohms;ID 0.5A;TO-92 (TO-226);PD 350mW;-55degc
N-Channel Mesh Overlay™ MOSFET, TO-220 Package, 75 W, -65 to +150°C Extremely high dv⁄dt capability Very low intrinsic capacitances Gate charge minimized Designed using the companies consolidated strip layout-based mesh...
NPN Transistor Array, 60 V Input Voltage, 0.002 nA Input Current, 0.58 pF Input Capacitance High voltage outputs Output clamp diodes Inputs compatible with various types of logic This consists...
Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF Advanced process technology Ultra low on-resistance 150 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free...
Power MOSFET, Pulsed Drain Current 92 A, Input Capacitance 1770 pF Advanced process technology Ultra low on-resistance 175 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free...
PROTECTION POWER XTR
Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8
Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8
Pwr MOSFET, 55V Dual N-Ch. HEXFET; SO-8
Silicon NPN Transistor, 350 V Collector to Emitter Voltage, 450 V Collector to Base Voltage Silicon epitaxial planar mounted in jedec TO-39 metal case Used in consumer and industrial line-operated...
Silicon Planar Epitaxial NPN Transistor, 0.6 A Collector Current Silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed for high speed switching application at collector current...
Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and...
Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
SS T092 GP XSTR NPN 25V -LEAD FREE
SS T092 GP XSTR NPN 40V -LEAD FREE
SS T092 GP XSTR PNP 150V -LEAD FREE
SS T092 GP XSTR PNP 40V -LEAD FREE
SS T092 LN XSTR PNP 50V -LEAD FREE
SS T092 RF XSTR NPN 160V -LEAD FREE, ammo pack
SS T092 RF XSTR NPN 160V -LEAD FREE
SS T092 RF XSTR NPN 25V -LEAD FREE
Switch, Analog; SPST; SOIC; 45 Ohms; 0.01 nA; 0.02 nA; 22 V; 30 mA
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an...
The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications. The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies...
TO-39 Package Type, Small Signal PNP Transistors Silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are designed for high speed saturated switching and general purpose applications.
TRANS MOSFET N-CH 100V 14A 3-PIN(3+TAB)TO-220AB
TRANS MOSFET N-CH 100V 9.2A 3-PIN (3+TAB) TO-220AB
TRANSISTOR ARRAY; NPN; 30 V; -2.5 A; 1.7 V; 0.93 MA (TYP.); 15 PF (TYP.); 0.25
TRANSISTOR DARLINGTON NPN 100V 20A, TO-3 PKG
TRANSISTOR DARLINGTON NPN 80V 10A, TO-220 PKG
TRANSISTOR DARLINGTON PNP 100V 20A, TO-3 PKG
TRANSISTOR NPN 450V 10A, TO-220
TRANSISTOR NPN 60V 4A, SOT-32 PKG
TRANSISTOR NPN 850V 15A, TO-3 PKG
TRANSISTOR NPN DARLINGTON 60V 5A, TO-220 PKG
TRANSISTOR NPN GP 200MA 40V, TO-92 PKG
TRANSISTOR PNP GP SS 200MA 40V, TO-92 PKG
Transistor Polarity, PNP, SS T092 GP XSTR PNP 40V
TRANSISTOR, BIPOLAR; NPN BIPOLAR; SILICON; TO-220 AB; 80; 7; 15 ADC COLLECTOR
TRANSISTOR, DARLINGTON NPN 4A 100V, TO225AA PKG
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG
TRANSISTOR, DARLINGTON PNP 60V, SOT-32 PKG
TRANSISTOR, DARLINGTON, NPN 1A 80V SOT223 PKG
TRANSISTOR, NPN 140V 1A, TO-39 PKG
TRANSISTOR, NPN 80V 10A, TO-220 PKG
TRANSISTOR, NPN AUDIO 1A 80V, SOT-223 PKG
TRANSISTOR, NPN GP SS 600MA 40V TO-92 PKG
TRANSISTOR, NPN GP SS 600MA 40V, SOT-23
TRANSISTOR, NPN, 1.5A 80V, TO126 PKG
Transistor, NPN, 1A, 250V, TO-39
TRANSISTOR, NPN, 60V 16A 140V, TO-3 PKG
TRANSISTOR, NPN, 60V 20A, TO-3 PKG
Transistor, NPN, 80 V(CEO), 500 mA, TO-92 Pb-Free
TRANSISTOR, NPN, 80V 4A, SOT-32 PKG
TRANSISTOR, NPN, 8A, 60V, T0-220 PKG
TRANSISTOR, PNP DARL 60V 5A, TO-220
TRANSISTOR, PNP, GENERAL PURPOSE, PKG STYLE TO-92
TRANSISTOR, PNP, SWITCH, 40V 7A, TO-220PKG
TRANSISTOR, POWER; NPN; TO-220AB; 60; 5; 10 ADC COLLECTOR; 2 W @ 25C
Transistor, Programmable Unijunction, 40 V, TO-92, Pb-Free
TRANSISTOR, SILICON; NPN BIPOLAR; TO-220 AB; 90; 80; 5; 15 ADC COLLECTOR; 75W
TRANSISTOR, SWITCH; NPN; 40VCE; 75VCB; 6VEB; 0.6A ICC; 1.8 W @ 25 C
Transistor: 200mA 625mW NPN General-Purpose Amplifier, TO-92
Transistor: 200mA 625mW PNP General-Purpose Amplifier, TO-92
Transistor: 600mA 625mW NPN General-Purpose Amplifier, TO-92
Transistor: 600mA 625mW PNP General-Purpose Amplifier, TO-92
TRANSISTOR; 300MW DISSIPATION; SOT-23
Transistor; NPN; 60; 100; 80; 30 Collector; 15 IB; 150W; 10 mAdc, PBF
TRANSISTOR; NPN; TO-220AB; 80; 70; 5; 7A COLLECTOR; 3A IB; 40 W @ 25C
TRANSISTOR; NPN; TO-220AB; 80; 80; 5; 10 ADC COLLECTOR; 250 IB; 65 W @ 25C
Transistor; PNP ; Silicone Material Type; TO-3;
Transistor; PNP; 80VDC; 80VDC; 5.0VDC; 50 Adc Collector; 15 Adc IB; 0.584C/W pbf
Transistor; Power; NPN; 2.2A; TO-3
Transistor; Programmable Unijunction; 40 V; 300 mW
Transistor; SS T092 RF Transistor NPN 160V -Lead Free
TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)
TRANSISTOR; TO-92; PNP; 40; 40; 5.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)
TXARRAY 3X NPN 2X PNP 16NSOIC
UNIVERSAL ACTIVE ORING CONTROLLER. CONTROLLER / DRIVER IC, SO-8

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