Allied Electronics, Inc. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
Features: Generation 4 Warp Speed IGBT Technology HEXFRED® Antiparallel Diodes with Ultrasoftreverse Recovery Very Low Conduction and Switching Losses Optional SMD Thermistor (NTC) Very Low Junction to Case Thermal Resistance...
Features: Over Temperature Shutdown Short Circuit Protection Active Clamp Open Load Detection Logic Ground Isolated from Power Ground ESD Protection
Features: TrenchFET® Power MOSFETs Maximum Junction Temperature: 175°C Rated
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device...
International Rectifier’s High Speed Power Switch provides a package current rating of up to 195 A, delivering a 60 percent improvement over typical package current ratings. These MOSFETs also provide...
Microchip's new Power MOSFET Drivers feature wide-range input supply voltages and output currents. These drivers offer outstanding latch-up immunity. The portfolio has recently been expanded with the addition of smaller,...
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for...
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial...
Devices Also Available without Free-Wheeling Diode
á1200V ULTRAFAST 4-20 KHZ COPACK IGBT IN A TO-247AC PACKAGE
á600V WARP 60-150 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE
0.05 K⁄W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT N-Channel, homogeneous Si Low inductance case Short tail current with low temperature dependence High short...
1.2A DUAL MOSFET DRVR, PDIP-8
1.5A DUAL MOSFET DRVR, TD MATCH, SOIC-8
1200V ULTRAFAST 4-20 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
1200V ULTRAFAST 5-40 KHZ COPACK IGBT INA TO-247AC PACKAGE
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
30V DUAL N-CHANNEL HEXFET POWER MOSFET IN A MICRO 8 PACKAGE
430V LOW-VCEON DISCRETE IGBT IN A TO-220AB PACKAGE
50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE
600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE
600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE
600V FAST 1-8 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE
600V FAST 1-8 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
600V ULTRAFAST 10-30 KHZ COPACK IGBT INA TO-220AB PACKAGE
600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-220AB PACKAGE
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-220AB PACKAGE
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
60V 50.0A TO-220
80V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
ADAPTIVE - P MOSFET - DRIVER PB-FRE
BIP C77 NPN 3A 40V
BIP C77 NPN 3A 60V
BIP C77 NPN 3A 80V
BIP C77 NPN 4A 60V
BIP C77 NPN 4A 80V
BIP C77 PNP 3A 80V
BIP C77 PNP 4A 80V
BIP T0218 NPN 10A 100V
BIP T0218 NPN 10A 60V
BIP T0218 NPN 20A 250V FG
BIP T0218 PNP 10A 100V
BIP T0218 PNP 20A 100V FG
BIP T0220 NPN 10A 60V
BIP T0220 NPN 10A 80V
BIP T0220 NPN 15A 60V
BIP T0220 NPN 1A 100V
BIP T0220 NPN 1A 250V
BIP T0220 NPN 1A 400V
BIP T0220 NPN 3A 100V
BIP T0220 NPN 5A 80V
BIP T0220 NPN 8A 100V
BIP T0220 NPN 8A 150V
BIP T0220 NPN 8A 400V
BIP T0220 NPN 8A 60V
BIP T0220 PNP 15A 80V
BIP T0220 PNP 3A 60V
BIP T0220 PNP 3A 80V
BIP T0220 PNP 6A 40V
BIP T0220 PNP 7A 50V
BIP T0220 PNP 7A 70V
BIP T0220 PNP 8A 100V
BIP T0220 PNP 8A 150V
BIP T0220 PNP 8A 400V FG
BIP T0220 PNP 8A 60V
BIP T0220 PNP 8A 80V
BIP T0264 NPN 16A 250V FG, LEAD-FREE
BIP T03 NPN 10A 140V, LEAD-FREE
BIP T03 NPN 15A 120V
BIP T03 NPN 15A 60V
BIP T03 NPN 16A 200V FG, LEAD-FREE
BIP T03 NPN 16A 250V, LEAD-FREE
BIP T03 NPN 20A 140V FG, LEAD-FREE
BIP T03 NPN 25A 60V, LEAD-FREE
BIP T03 NPN 25A 80V, LEAD-FREE
BIP T03 NPN 30A 120V FG
BIP T03 NPN 30A 40V, LEAD-FREE
BIP T03 NPN 30A 90V FG, LEAD-FREE
BIP T03 NPN 50A 120V FG
BIP T03 NPN 50A 80V, LEAD-FREE
BIP T03 PNP 120A 60V FG
BIP T03 PNP 12A 100V, LEAD-FREE
BIP T03 PNP 15A 60V FG, LEAD-FREE
BIP T03 PNP 16A 200V FG, LEAD-FREE
BIP T03 PNP 16A 250V, PB FREE
BIP T03 PNP 20A 140V FG, LEAD-FREE
BIP T03 PNP 25A 80V
BIP T03 PNP 30A 120V FG, LEAD-FREE
Chopper, High Speed Switch, Silicon N-Channel JFET Transistors Silicon N-channel JFET transistor, chopper, high speed switch.
Dual Gate N-Channel MOSFET, Drain Current 50 mA, Temperature Range -65 to +175 °C 12 MHz (Max.) bandwidth at VDD≥18 V 300 °C lead temperature during soldering 3.3 pF input...
Enhancement Mode MOSFET Transistors
High Power IGBT Driver PCB
High Voltage, High Current Darlington Transistor Array, PDIP16, Pb-Free
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free
IGBT Module Transistors
IGBT with Ultrafast Soft Recovery Diode, 600 V, 13 A, TO-220AB
IGBT, 600 V, 41 A, TO-247AC
IGBT, Fast Speed, 600 V, 27 A, TO-220AB
IGBT, with Ultrafast Soft Recovery Diode, 500 V, 39 A, TO-247AC
JFET-N-CH UHF/VHF AMP
Microchip's new Power MOSFET Drivers feature wide-range input supply voltages and output currents. These drivers offer outstanding latch-up immunity. The portfolio has recently been expanded with the addition of smaller,...
MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W
MOSFET, 100V, 35A, 28.5 MOHM, 39 NC QG,D-PAK
MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7
MOSFET, 150V, 99A, 12.1 mOhm, 77 nC Qg,D2-Pak
MOSFET, 200V, 16A, 170 MOHM, 33 NC QG, TO-220AB
MOSFET, 200V, 76A, 23.2 mOhm, 100 nC Qg, D2-PAK
MOSFET, 300V, 46A, 59 MOHM, 165 NC QG, TO-247AC
MOSFET, 30V, 190A, 57 NC QG, TO220
MOSFET, 30V, 33A, 31 MOHM, 29 NC QG, I-PAK
MOSFET, 40V, 206A, 3.7 MOHM, 160 NC QG,TO-273AA
MOSFET, 40V, 240A, 1.2 mOhm, 160 nC Qg,D2PAK-7
MOSFET, 55V, 10A, 140 MOHM, 5.3 NC QG, LOGIC LEVEL, I-PAK
MOSFET, 55V, 140A, 8 MOHM, 100 NC QG, TO-220AB
MOSFET, 55V, 14A, 60 MOHM, 10 NC QG, LOGIC LEVEL, TO-220 FULLPACK
MOSFET, 55V, 49A, 17.5 MOHM, 42 NC QG, TO-262
MOSFET, 55V, 61A, 14 MOHM, 61 NC QG, LOGIC LEVEL, I-PAK
MOSFET, 60V, 195A, 2.5MOHM, 200NC QG, TO-220
MOSFET, 60V, 39A, 12 MOHM, 73.3 NC QG, TO-220 FULLPACK
MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7
MOSFET, 80V, 38A, 29 MOHM, 37 NC QG, D-PAK
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W
MOSFET, Dual, Complementary, 30V, 4.9/-3.9A, 2W, SO-8
MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363
MOSFET, Dual, N-Channel, 20V, 8.2A, 2W,SO-8
MOSFET, Dual, N-Channel, 60V, 6.5 A, 3.7 W, SO-8
MOSFET, N Ch., 100V, 168A, 4.6 MOHM, 152 NC QG, TO-247AC, Pb-Free
MOSFET, N Ch., 100V, 290A, 2.6 MOHM, 360 NC QG, TO-247AC, Pb-Free
MOSFET, N Ch., 100V, 97A, 9 MOHM, 83 NCQG, TO-220AB, Pb-Free
MOSFET, N Ch., 150V, 171A, 5.9 MOHM, 151 NC QG, TO-247AC, Pb-Free
MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free
MOSFET, N Ch., 30V, 87A, 6.3 MOHM, 17 NC QG, D2-PAK, Pb-Free
MOSFET, N Ch., 40V, 320A, 1.6 MOHM, 170NC QG, D2-PAK 7-PIN, Pb-Free
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free
MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, Pb-Free
MOSFET, N Ch., 75V, 210A, 3.3 MOHM, 160NC QG, TO-247AC, Pb-Free
MOSFET, N Ch., 75V, 350A, 1.85 MOHM, 380 NC QG, TO-247AC, Pb-Free
MOSFET, N Ch., Digital Audio, 200V, 18A, 100 MOHM, 18 NC QG, TO-220AB, Pb-Free
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
MOSFET, N-CHANNEL 60V 7.5R, SOT23 PKG
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 150mohm, Id 4.7A, SO-8, Pd 5W
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W
MOSFET, P-CHANNEL, -30V, 7.5A, 19 MOHM,SO-8
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262
MOSFET, Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC
MOSFET, Power; P-Channel; -30 V; 20 V; 13 A; 4 W; -55 to 150 degC; 30 degC/W
Mosfet, Power;60V;60A;Power,100W;R(ds),0.012ohm;TO- 220AB
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.032Ohm;ID 4.4A;SO-8;PD 1.1W;VGS +/-20
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 17 Milliohms;ID -8A;SO-8;PD 2W;gFS 12S
MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 2Ohms;ID 6.1A;TO-247AC;PD 190W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 170A;Super-247;PD 580W;gFS 52S
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 72A;TO-247AC;PD 190W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 57A;TO-247AC;PD 200W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;D2Pak;PD 140W;VGS +/-16V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;TO-220AB;PD 140W;VGS +/-16V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 3.4A;PowerPAK 1212-8;PD 1.5W
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 33A;TO-247AC;PD 140W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.055Ohm;ID 41A;TO-247AC;PD 230W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 28A;TO-220AB;PD 150W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-10V;-55
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 15Milliohms;ID 56A;D-Pak (TO-252AA);-55deg
N Channel Enhancement Mode MOSFETs
N Channel JFET Silicon Transistors
N-Channel Silicon Junction Field Effect Transistor (JFET) High power gain is 10 dB (M") @ 400MHz High transconductance is 4000 μmho (M") @ 400MHz Drain and gate leads separated for...
Power MOSFET, Pulsed Drain Current 92 A, Input Capacitance 1770 pF Advanced process technology Ultra low on-resistance 175 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free...
Silicon N Channel JFET Transistors
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an...
The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications. The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies...
The new IRFB4110 75V MOSFETs are designed to shrink circuit size and increase power density in high power server AC-DC switch-mode power supplies (SMPS) with 12V output or in 48V...

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