NPN BJT Transistor, 60V, 10A, 75W, TO-220 Product overview: MJE3055TG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A, 75W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 10A, 75W, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE3055TG can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 058933-MJE3055TG
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 2MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 8V @ 3.3A, 10A
Collector Cut-off Current(Max): 700μA
Typical Gain (hFE) (Min): 20 @ 4A, 4V
Maximum Power Dissipation: 75W
TRANS NPN 60V 10A TO220
Bipolar (BJT) Transistor NPN 60V 10A 2MHz 75W Through Hole TO-220
NPN power transistor,MJE3055T 10A
NPN power transistor,MJE3055T 10A
Bipolar Transistors - BJT 10A 60V 125W NPN
TRANS NPN 60V 10A TO220
BIPOLAR TRANSISTOR, NPN, 60V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2MHz RoHS Compliant: Yes
POWER BIPOLAR TRANSISTOR, 10A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | 276-MJE3055TG | 058933-MJE3055TG | MJE3055TG | MJE3055TGOS-ND | 5449371 | MJE3055TG | 70100013 | MJE3055TG | 45J1504 | 18712542 |
| Product Name | 60V 10A 75W TO-220 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJE3055TG | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistors | Bipolar Transistors - BJT | BIP T0220 NPN 10A 60V | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 60V To-220; Transistor Polarity Onsemi | Transistor |
| Polarity | NPN | NPN; NPN | NPN; NPN | NPN | NPN | NPN | NPN | |||
| IC(max) | 10000 milliamps | 10000 milliamps | 10000 milliamps | 10000 milliamps | 10000 milliamps | |||||
| VCEO | 60 volts | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| VCBO | 70 volts | 70 volts | ||||||||
| fT | 2 MHz |
