Win Source Part Number: 1082911-NTE102
Category: Discrete Semiconductor Products>Transistors
Package: Bag
Standard Package: 1
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 24 V
Current - Collector (Ic) (Max): 150 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 12mA, 150mV
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Temperature Range - Operating: -65°C ~ 100°C (TJ)
Alternative Parts (Cross-Reference): 2N5322;
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
HTSUS: 8541.21.0095
Mfr: NTE Electronics, Inc
Other Names: 2368-NTE102
TRANS PNP 24V 0.15A TO5
Germanium Complementaryyy Transistors, Power Output, Driver, Germanium Material Type
BIPOLAR TRANSISTOR, PNP, -24V; Transistor Polarity:PNP; Collector Emitter Voltage Max:24V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
| Win Source Electronics | Acme Chip Technology Co., Limited | Allied Electronics, Inc. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1082911-NTE102 | NTE102 | 70214847 | 29C4414 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | TRANSISTOR PNP GERMANIUM 25V 0.15A TO-5PRE-AMP DRIVER OUTPUT | Bipolar Transistor, Pnp, -24V; Transistor Polarity Nte Electronics |
| Polarity | PNP | NPN; PNP | PNP | |
| Package Type | SOT3 | TO-5 | TO-3 | |
| IC(max) | 150 milliamps | 150 milliamps | 150 milliamps | 150 milliamps |
| Power Gain | 30 dB | |||
| Output Power | 0.1500 watts |
