NTE Electronics, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE248

Description
TRANS PNP DARL 100V 12A TO3
Description
TRANS PNP DARL 100V 12A TO3

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE248 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NTE248
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE248
TRANS PNP DARL 100V 12A TO3

TRANS PNP DARL 100V 12A TO3

Supplier's Site
TRANSISTOR PNP SILICON DARLINGTON 100V IC=12A TO-3 CASE COMP'L TO NTE247 - 70215977 - Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR PNP SILICON DARLINGTON 100V IC=12A TO-3 CASE COMP'L TO NTE247
70215977
TRANSISTOR PNP SILICON DARLINGTON 100V IC=12A TO-3 CASE COMP'L TO NTE247 70215977
Silicon Complementary Transistor Darlington Power Amplifier, PNP Transistor Type Monolithic construction with built-in base-emitter shunt resistors -65 to +200 °C operating temperature range Silicon complementary darlington transistor designed for general-purpose amplifier and low-frequency switching applications.

Silicon Complementary Transistor Darlington Power Amplifier, PNP Transistor Type

  • Monolithic construction with built-in base-emitter shunt resistors
  • -65 to +200 °C operating temperature range
    Silicon complementary darlington transistor designed for general-purpose amplifier and low-frequency switching applications.
Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number NTE248 70215977
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANSISTOR PNP SILICON DARLINGTON 100V IC=12A TO-3 CASE COMP'L TO NTE247
Packing Method Bag
IC(max) 12000 milliamps
VCEO 100 volts 100 volts
Polarity PNP
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