onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5401G 2N5401G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 804718-2N5401G Packaging: Bulk Mounting Style: Through Hole Power - Max: 625mW Transistor Type: PNP Frequency - Transition: 300MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-92-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 50nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 5mA, 50mA Part Number Series: 2N5401 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 10mA, 5V
  • TRANSISTORS - Transistors (BJT) - Single - 2N5401G - 804718-2N5401G - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 2N5401GOS-ND - DigiKey
    DigiKey
  • SS T092 GP XSTR PNP 150V -LEAD FREE - 70099759 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92 - 598-2N5401G - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5401G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 804718-2N5401G Packaging: Bulk Mounting Style: Through Hole Power - Max: 625mW Transistor Type: PNP Frequency - Transition: 300MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-92-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 50nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 5mA, 50mA Part Number Series: 2N5401 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 10mA, 5V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5401G - 804718-2N5401G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5401G
804718-2N5401G
TRANSISTORS - Transistors (BJT) - Single - 2N5401G 804718-2N5401G
Manufacturer: ON Semiconductor Win Source Part Number: 804718-2N5401G Packaging: Bulk Mounting Style: Through Hole Power - Max: 625mW Transistor Type: PNP Frequency - Transition: 300MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-92-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Current - Collector (Ic) (Maximum): 600mA Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 50nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 5mA, 50mA Part Number Series: 2N5401 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 10mA, 5V

Manufacturer: ON Semiconductor
Win Source Part Number: 804718-2N5401G
Packaging: Bulk
Mounting Style: Through Hole
Power - Max: 625mW
Transistor Type: PNP
Frequency - Transition: 300MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-92-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Maximum): 600mA
Voltage - Collector Emitter Breakdown (Maximum): 150V
Current - Collector Cutoff (Maximum): 50nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 5mA, 50mA
Part Number Series: 2N5401
DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 10mA, 5V

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore
150V 600mA 300MHz Bipolar Transistor
276-2N5401G
150V 600mA 300MHz Bipolar Transistor 276-2N5401G
PNP BJT Transistor, TO-92, 150V, 600mA, 300MHz Product overview: 2N5401G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 600mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 150V, 600mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5401G can be used for catalog matching and distributor lookup.

PNP BJT Transistor, TO-92, 150V, 600mA, 300MHz Product overview: 2N5401G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 600mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 150V, 600mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5401G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 2N5401GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5401GOS-ND
Single Bipolar Transistors 2N5401GOS-ND
Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
SS T092 GP XSTR PNP 150V -LEAD FREE - 70099759 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
SS T092 GP XSTR PNP 150V -LEAD FREE
70099759
SS T092 GP XSTR PNP 150V -LEAD FREE 70099759
SS T092 GP XSTR PNP 150V -LEAD FREE

SS T092 GP XSTR PNP 150V -LEAD FREE

Supplier's Site
ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92 - 598-2N5401G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92
598-2N5401G
ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92 598-2N5401G
ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92

ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5401G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5401G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5401G
TRANS PNP 150V 0.6A TO92

TRANS PNP 150V 0.6A TO92

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Allied Electronics, Inc. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 804718-2N5401G 276-2N5401G 2N5401GOS-ND 70099759 598-2N5401G 2N5401G
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5401G 150V 600mA 300MHz Bipolar Transistor Single Bipolar Transistors SS T092 GP XSTR PNP 150V -LEAD FREE ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP PNP; PNP
Package Type TO-92; SOT3 TO-92; TO-226-3, TO-92-3 Long Body TO-92
Packing Method Bulk; Bulk Bulk; Bulk
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Power Gain 60 dB
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