onsemi Single Bipolar Transistors 2N5551G

Description
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2N5551GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N5551GOS-ND
Single Bipolar Transistors 2N5551GOS-ND
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Single Bipolar Transistors - 2N5551G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2N5551G
Single Bipolar Transistors 2N5551G
TRANS NPN 160V 0.6A TO92

TRANS NPN 160V 0.6A TO92

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N5551G - 1003953-2N5551G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5551G
1003953-2N5551G
TRANSISTORS - Transistors (BJT) - Single - 2N5551G 1003953-2N5551G
Manufacturer: ON Semiconductor Win Source Part Number: 1003953-2N5551G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1003953-2N5551G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
Bipolar Transistor
276-2N5551G
Bipolar Transistor 276-2N5551G
Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: 2N5551G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5551G can be used for catalog matching and distributor lookup.

Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX Product overview: 2N5551G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5551G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Fort Worth, TX, USA
SS T092 RF XSTR NPN 160V -LEAD FREE
70099762
SS T092 RF XSTR NPN 160V -LEAD FREE 70099762
SS T092 RF XSTR NPN 160V -LEAD FREE

SS T092 RF XSTR NPN 160V -LEAD FREE

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5551G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5551G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5551G
TRANS NPN 160V 0.6A TO92

TRANS NPN 160V 0.6A TO92

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N5551GOS-ND 2N5551G 1003953-2N5551G 276-2N5551G 70099762 2N5551G
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N5551G Bipolar Transistor SS T092 RF XSTR NPN 160V -LEAD FREE Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3; TO-92-3 TO-92
IC(max) 600 milliamps 600 milliamps 600 milliamps
VCEO 160 volts 160 volts 160 volts
Operating Frequency 300 MHz 300 MHz
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