Allied Electronics, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
Product Name | Notes |
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Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB... | |
Features: Over Temperature Shutdown Short Circuit Protection Active Clamp Open Load Detection Logic Ground Isolated from Power Ground ESD Protection | |
Features: 175°C Rated (Max. Junction Temperature) TrenchFET® Power MOSFETs | |
Features: Halogen-Free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 1.8 V Rated Ultra Low On-Resistance for Increased Battery Life New PowerPAK® Package - Low Thermal Resistance, RthJC - Low... | |
Features: Halogen-free Option Available | |
Features: TrenchFET® Power MOSFETS 175°C Junction Temperature 100% Rg Tested | |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device... | |
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and... | |
International Rectifier’s High Speed Power Switch provides a package current rating of up to 195 A, delivering a 60 percent improvement over typical package current ratings. These MOSFETs also provide... | |
Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of... | |
Specifically designed for Automotive applications, ID = 75A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design... | |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C... | |
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design... | |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for... | |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industria... | |
60V 50.0A TO-220 | |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device... | |
Dual Gate N-Channel MOSFET, Drain Current 50 mA, Temperature Range -65 to +175 °C 12 MHz (Max.) bandwidth at VDD≥18 V 300 °C lead temperature during soldering 3.3 pF input... | |
Enhancement Mode MOSFET Transistors | |
Enhancement Mode MOSFET, N-Channel, 0.028 Ohm (Max.) Dynamic dv⁄dt rating +175°C operating temperature Fast switching Ease of paralleling Simple drive requirements | |
Enhancement Mode MOSFET, N-Channel, 40 Milliohms (Typ.) High speed switch | |
MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W | |
MOSFET N-Channel Enhancement Mode High Speed Switch, -55 to +150°C Dynamic dv⁄dt rating Fast switching Ease of paralleling Simple drive requirements | |
MOSFET, 100V, 35A, 28.5 MOHM, 39 NC QG,D-PAK | |
MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7 | |
MOSFET, 150V, 99A, 12.1 mOhm, 77 nC Qg,D2-Pak | |
MOSFET, 200V, 16A, 170 MOHM, 33 NC QG, TO-220AB | |
MOSFET, 200V, 76A, 23.2 mOhm, 100 nC Qg, D2-PAK | |
MOSFET, 300V, 46A, 59 MOHM, 165 NC QG, TO-247AC | |
MOSFET, 30V, 190A, 57 NC QG, TO220 | |
MOSFET, 30V, 33A, 31 MOHM, 29 NC QG, I-PAK | |
MOSFET, 40V, 206A, 3.7 MOHM, 160 NC QG,TO-273AA | |
MOSFET, 40V, 240A, 1.2 mOhm, 160 nC Qg,D2PAK-7 | |
MOSFET, 55V, 10A, 140 MOHM, 5.3 NC QG, LOGIC LEVEL, I-PAK | |
MOSFET, 55V, 140A, 8 MOHM, 100 NC QG, TO-220AB | |
MOSFET, 55V, 14A, 60 MOHM, 10 NC QG, LOGIC LEVEL, TO-220 FULLPACK | |
MOSFET, 55V, 49A, 17.5 MOHM, 42 NC QG, TO-262 | |
MOSFET, 55V, 61A, 14 MOHM, 61 NC QG, LOGIC LEVEL, I-PAK | |
MOSFET, 60V, 195A, 2.5MOHM, 200NC QG, TO-220 | |
MOSFET, 60V, 39A, 12 MOHM, 73.3 NC QG, TO-220 FULLPACK | |
MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7 | |
MOSFET, 80V, 38A, 29 MOHM, 37 NC QG, D-PAK | |
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W | |
MOSFET, N Ch., 100V, 168A, 4.6 MOHM, 152 NC QG, TO-247AC, Pb-Free | |
MOSFET, N Ch., 100V, 290A, 2.6 MOHM, 360 NC QG, TO-247AC, Pb-Free | |
MOSFET, N Ch., 100V, 97A, 9 MOHM, 83 NCQG, TO-220AB, Pb-Free | |
MOSFET, N Ch., 150V, 171A, 5.9 MOHM, 151 NC QG, TO-247AC, Pb-Free | |
MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free | |
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free | |
MOSFET, N Ch., 30V, 87A, 6.3 MOHM, 17 NC QG, D2-PAK, Pb-Free | |
MOSFET, N Ch., 40V, 320A, 1.6 MOHM, 170NC QG, D2-PAK 7-PIN, Pb-Free | |
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, D2-PAK, Pb-Free | |
MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, Pb-Free | |
MOSFET, N Ch., 75V, 210A, 3.3 MOHM, 160NC QG, TO-247AC, Pb-Free | |
MOSFET, N Ch., 75V, 350A, 1.85 MOHM, 380 NC QG, TO-247AC, Pb-Free | |
MOSFET, N Ch., Digital Audio, 200V, 18A, 100 MOHM, 18 NC QG, TO-220AB, Pb-Free | |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W | |
MOSFET, N-CHANNEL 60V 7.5R, SOT23 PKG | |
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 150mohm, Id 4.7A, SO-8, Pd 5W | |
MOSFET, P-CH, Vds -60V, Vgs +/- 20V, Rds(on) 285mohm, Id 1.6A, SOT-23, Pd 1.7W | |
MOSFET, P-CHANNEL, -30V, 7.5A, 19 MOHM,SO-8 | |
MOSFET, P-CHANNEL, -55V, -31A, 60 MOHM,42 NC QG, TO-262 | |
MOSFET, Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC | |
MOSFET, Power; P-Channel; -30 V; 20 V; 13 A; 4 W; -55 to 150 degC; 30 degC/W | |
Mosfet, Power;60V;60A;Power, 100W;R(ds),0.012ohm; TO-220AB | |
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1 | |
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.032Ohm;ID 4.4A;SO-8;PD 1.1W;VGS +/-20 | |
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de | |
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 17 Milliohms;ID -8A;SO-8;PD 2W;gFS 12S | |
MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 2Ohms;ID 6.1A;TO-247AC;PD 190W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 1000V;RDS(ON) 5Ohms;ID 3.1A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 170A;Super-247;PD 580W;gFS 52S | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 72A;TO-247AC;PD 190W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 57A;TO-247AC;PD 200W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;D2Pak;PD 140W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;TO-220AB;PD 140W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 3.4A;PowerPAK 1212-8;PD 1.5W | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 33A;TO-247AC;PD 140W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.055Ohm;ID 41A;TO-247AC;PD 230W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 28A;TO-220AB;PD 150W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-10V;-55 | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 1.3A;HD-1;PD 1.3W;VGS +/-20V;-55 | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.27Ohm;ID 9.2A;TO-220AB;PD 60W;VGS +/-10V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55 | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1.5A;SOT-223;PD 3.1W;VGS +/-10V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-10V;VF 2. | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 1A;HD-1;PD 1.3W;VGS +/-20V;VF 2. | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-10V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 15Milliohms;ID 56A;D-Pak (TO-252AA);-55deg | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 36Milliohms;ID 32A;D-Pak (TO-252AA);-55deg | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;D2Pak;PD 70W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S | |
MOSFET, Power;N-Ch;VDSS 100VDC;RDS(ON) 5 Ohms;ID 0.17A;SOT-23 (TO-236);PD 225mW | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.032Ohm;ID 60A;TO-220AB;PD 330W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.068Ohm;ID 2.7A;SO-8;PD 1.5W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55 | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de | |
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.085Ohm;ID 30A;TO-247AC;PD 190W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55 | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.17Ohm;ID 16A;D2Pak;PD 140W;VGS +/-30V;-55 | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 18A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 20A;TO-247AC;PD 150W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.18Ohm;ID 9.8A;TO-220 Full-Pak;PD 40W | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.195Ohm;ID 1.7A;SO-8;PD 1.5W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.1Ohm;ID 24A;TO-220AB;PD 170W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 0.8A;HD-1;PD 1W;VGS +/-20V;gFS 0. | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 5.2A;TO-220AB;PD 50W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2 | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 2.6A;TO-252AA;PD 25W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 3.3A;TO-220AB;PD 36W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;I-Pak (TO-251AA);PD 43W | |
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID 48A;TO-220AB;PD 69W;VGS +/-10V | |
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V | |
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.03Ohm;ID 6.5A;Micro6;PD 2W;VGS +/-12V;-55d | |
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V | |
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 15 Milliohms;ID 36A;TO-220AB;PD 47W;VGS +/-2 | |
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.075Ohm;ID 38A;TO-247AC;PD 280W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.14Ohm;ID 23A;TO-247AC;PD 190W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.28Ohm;ID 14A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.28Ohm;ID 15A;TO-247AC;PD 150W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.28Ohm;ID 7.9A;TO-220 Full-Pak;PD 40W | |
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 30Milliohms;ID 60A;TO-247AC;PD 430W;VF 1V | |
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8 | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.026Ohm;ID 38A;D2Pak;PD 68W;VGS +/-16V;-55d | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.04Ohm;ID 24A;TO-220AB;PD 45W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.06Ohm;ID 15A;SO-8;PD 2.5W;VGS +/-12V;gFS 4 | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;D2Pak;PD 94W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.3Milliohms;ID 210A;TO-220AB;PD 230W;-55de | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 161A;D-Pak (TO-252AA);VF 1V | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5 Milliohms;ID 18A;SO-8;PD 3.1W;VGS +/-12V | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 116A;D2Pak;PD 180W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.2Ohm;ID 23A;TO-247AC;PD 280W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.3Ohm;ID 16A;TO-247AC;PD 190W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.3Ohm;ID 16A;TO-247AC;PD 190W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.55Ohm;ID 10A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.55Ohm;ID 10A;TO-220AB;PD 125W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 0.55Ohm;ID 5.4A;TO-220 Full-Pak;PD 40W | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1.8 Ohms;ID 3.3A;TO-220AB;PD 50W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-20V;-55 | |
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 1Ohm;ID 5.5A;TO-220AB;PD 74W;VGS +/-30V;-55 | |
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 202A;TO-220AB;PD 333W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.5Milliohms;ID 200A;TO-220AB;PD 230W;-55de | |
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 42A;D-Pak (TO-252AA);-55deg | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.087Ohm;ID 46A;TO-274AA;PD 540W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.23Ohm;ID 22A;TO-247AC;PD 277W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.27Ohm;ID 20A;TO-247AC;PD 280W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.27Ohm;ID 20A;TO-247AC;PD 280W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.4Ohm;ID 14A;TO-247AC;PD 190W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.4Ohm;ID 14A;TO-247AC;PD 190W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.52Ohm;ID 6.6A;TO-220 Full-Pak;PD 60W | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 4.6A;TO-220 Full-Pak;PD 40W | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8.8A;TO-247AC;PD 150W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.85Ohm;ID 8A;TO-220AB;PD 125W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.4 Ohms;ID 5A;TO-220AB;PD 74W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.7 Ohms;ID 5A;I-Pak;PD 110W;VGS +/-30V;-55 | |
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 3 Ohms;ID 2.5A;TO-220AB;PD 50W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 50VDC;RDS(ON) 3.5 Ohms;ID 200mA;SOT-23 (TO-236);PD 225mW | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;TO-220AB;PD 200W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 110A;TO-247AC;PD 200W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 36A;TO-220 Full-Pak;PD 42W;-55de | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 64A;TO-247AC;PD 140W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;D2Pak;PD 110W;VGS +/-16V;-55 | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;TO-220AB;PD 110W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.02Ohm;ID 53A;TO-247AC;PD 120W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;I-Pak (TO-251AA);PD 45W | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2 | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 169A;TO-220AB;PD 330W;-55de | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 42 Milliohms;ID 26A;D-Pak (TO-252AA);PD 79W | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg | |
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S | |
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V | |
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.2 Ohms;ID 6.2A;TO-220AB;PD 125W;VGS +/-30 | |
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 4.4 Ohms;ID 0.32A;HD-1;PD 1W;VGS +/-20V;-55 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.009Ohm;ID 70A;TO-247AC;PD 300W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.009Ohm;ID 9.6A;PowerPAK SO-8;PD 1.9W;-55de | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.018Ohm;ID 6.2A;PowerPAK SO-8;PD 1.8W;-55de | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.018Ohm;ID 6A;SO-8;PD 1.7W;VGS +/-20V;gFS 2 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.021Ohm;ID 5.6A;PowerPAK 1212-8;PD 1.5W | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-220AB;PD 110W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.042Ohm;ID 28A;TO-220AB;PD 68W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-10V;Qg 18 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-20V;Qg 25 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 1.7A;HD-1;PD 1.3W;VGS +/-10V;VF 1. | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 10A;TO-220AB;PD 43W;VGS +/-10V;-55 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.2Ohm;ID 7.7A;TO-251AA;PD 2.5W;VGS +/-10V | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 1.8Ohms;ID 0.2A;SOT-23-3L;PD 0.35W;VGS +/-1 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 1.8Ohms;ID 0.35A;TO-92;PD 1W;VGS +/-18V;-55 | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 16.5 Milliohms;ID 55A;TO-220AB;PD 115W;-55de | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.5Milliohms;ID 130A;TO-247AC;PD 250W;-55de | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg | |
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;D2Pak;PD 110W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 60VDC;RDS(ON) 5Ohms;ID 0.5A;SOT-23 (TO-236);PD 225mW | |
MOSFET, Power;N-Ch;VDSS 68VDC;RDS(ON) 88 Milliohms;ID 3A;SOT-223 (TO-261);-55deg | |
MOSFET, Power;N-Ch;VDSS 68VDC;RDS(ON) 92 Milliohms;ID 3A;SOT-223 (TO-261);-55deg | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20 | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 12.8 Milliohms;ID 42A;D-Pak (TO-252AA);-55de | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 170A;TO-247AC;PD 310W;-55de | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de | |
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg | |
MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 3 Ohms;ID 4.1A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 12 Milliohms;ID 55A;MZ;PD 89W;VGS +/-20V;-40 | |
MOSFET, Power;P-Ch; 60V 1.100A HEXDIP | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-220AB;PD 200W;VGS +/-20 | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.117Ohm;ID -23A;TO-220AB;PD 140W;VGS +/-2 | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.117Ohm;ID -23A;TO-247AC;PD 140W;VGS +/-2 | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -11A;TO-220 Full-Pak;PD 48W | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;D2Pak;PD 79W;VGS +/-20V;-55 | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -19A;TO-220AB;PD 150W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -21A;TO-247AC;PD 180W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.3Ohm;ID -12A;TO-220AB;PD 88W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.6Ohm;ID -1A;HD-1;PD 1.3W;VGS +/-20V;-55d | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.6Ohm;ID -6.8A;TO-220AB;PD 60W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 1.2 Ohms;ID -4A;TO-220AB;PD 43W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc | |
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.005Ohm;ID +/-16A;SO-8;PD 2.5W;VGS +/-12V | |
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.025Ohm;ID -4.1A;TO-236 (SOT-23);PD 0.75W | |
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V | |
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;TO-220AB;PD 110W;VGS +/-20 | |
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 120 Milliohms;ID -27A;TO-220AB;PD 250W | |
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -11A;TO-220AB;PD 125W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.5Ohm;ID -12A;TO-247AC;PD 150W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 0.8Ohm;ID -6.5A;TO-220AB;PD 74W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -200V;RDS(ON) 1.5 Ohms;ID -3.5A;TO-220AB;PD 40W;VGS +/-2 | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.031Ohm;ID -3.7A;TO-236 (SOT-23);PD 0.75W | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.042Ohm;ID -24A;D2Pak;PD 75W;VGS +/-8V;-55 | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS +/-12V | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.05Ohm;ID -5.6A;Micro6 (SOT-23);PD 2W | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.2Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-12V | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.6Ohm;ID -0.78A;Micro3;PD 540mW;VGS +/-12V | |
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.8Ohm;ID -350mA;SC-75A (SOT-416);PD 150mW | |
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55 | |
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.085Ohm;ID -4A;TSOP-6;PD 2W;VGS +/-20V;-55 | |
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S | |
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 0.015Ohm;ID -10.5A;SO-8;PD 2.5W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;D2Pak;PD 200W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.02Ohm;ID -74A;TO-220AB;PD 200W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;I-Pak (TO-251AA);PD 38W | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -12A;TO-220AB;PD 45W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 20Milliohms;ID -70A;D2Pak;PD 170W;VGS +/-2 | |
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.12Ohm;ID +/-3.5A;SO-8;PD 3W;VGS +/-20V;gF | |
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.275Ohm;ID -1.25A;TO-236 (SOT-23);PD 1.25W | |
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.28Ohm;ID -1.6A;HD-1;PD 1.3W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.8A;SOT-223;PD 3.1W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -5.1A;TO-251AA;PD 2.5W;VGS +/-20V | |
MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V | |
MOSFET, Power;P-Ch;VDSS 50VDC;RDS(ON) 5Ohms;ID 130mA;SOT-23 (TO-236);PD 225mW | |
Mosfet,N-CH;60V;1.7A ;PDIP-4 | |
MOSFET,Power;N-Ch;VD SS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de | |
MOSFET;Dual N-Ch;VDSS 6V;RDS(ON) 0.9Ohm;ID 500mA;SC-74;PD 380mW;VGS 6VDC;-40degc | |
MOSFET;Dual P-Ch;VDSS -20V;RDS(ON) 215 Milliohms;ID -0.88A;SC-88/SOT-363 ;gFS 3S | |
MOSFET;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 40A;TO-252;PD 71W;VGS +/-20V;gFS 40S | |
MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.1Ohm;ID30A;TO-247; PD 313W;VGS +/-30V;gFS 20S | |
MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.23Ohm;ID 17A;TO-247;PD 190W;VGS +/-30V;gFS 13S | |
MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 5 Ohms;ID 200mA;TO-92 (TO-226);PD 350mW;-55degc | |
MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 7.5 Ohms;ID +/-115mA;SOT-23 (TO-236);PD 225mW;-55 | |
MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 7.5 Ohms;ID 150mA;TO-92;PD 400mW;VGS +/-20VDC;-55 | |
MOSFET;N-Ch;VDSS 90VDC;RDS(ON) 1.8 Ohms;ID 0.5A;TO-92 (TO-226);PD 350mW;-55degc | |
MOSFET;P-Ch;VDSS -60V;RDS(ON) 10 Ohms;ID -185mA;TO-236 (SOT-23);PD 350mW;-55degc | |
MOSFET;Single P-Ch;VDSS -20V;RDS(ON) 0.26Ohm;ID -760mA;SC-75/SOT-416 ;PD 301mW | |
N Channel Enhancement Mode MOSFETs | |
N Channel Enhancement Mode Switches | |
N Channel MOSFET, Package Type SO-8, Temperature Range -55 to +150 °C 30 V drain-source voltage 50 A pulsed drain current 50 °C⁄W maximum thermal resisitance junction to ambient, -55... | |
N–Channel MOSFET Dynamic dv⁄dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements | |
N-Channel Enhancement Mode MOSFET, 28 Amps, 150 Watts, -55 to +175°C Dynamic dv⁄dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements | |
N-Channel Enhancement Mode MOSFET, 3.1 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements | |
N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Isolated central Mounting hole Fast switching Ease of paralleling Simple... | |
N-Channel Enhancement Mode MOSFET, 8.0 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements | |
N-Channel Enhancement Mode MOSFET, Continuous Drain Current 40 A @ +25 °C Fast switching Low drive current Ease of paralleling No second breakdown Excellent temperature stability The NTE2392 is an... | |
N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A Low on-state resistance Very high-speed switching Converters The NTE2377 is an N-channel enhancement mode power... | |
N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 14 A @ +25 °C High voltage: 450 V for off-line SMPS High current: 12 A for up to 350 W SMPS... | |
N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C Ultra fast switching for operation at less than 100kHz High voltage: 500 V for off-line SMPS High... | |
N-Channel Mesh Overlay™ MOSFET, TO-220 Package, 75 W, -65 to +150°C Extremely high dv⁄dt capability Very low intrinsic capacitances Gate charge minimized Designed using the companies consolidated strip layout-based mesh... | |
N-Channel MOSFET Enhancement Mode High Speed Switch, -55 to +150°C | |
P-CHANNEL 40-V (D-S), 175C MOSFET | |
PCB Mounting and TO-220AB Package Dual N-Channel 250 V Voltage (D-S) Power MOSFET TrenchFET power MOSFET 175 °C junction temperature New low thermal resistance package Resistance drain to source on... | |
POWER MOSFET N-CHANNEL 100V ID=20A TO220 CASE LOGIC LEVEL HIGH SPEED SWITCH | |
Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF Advanced process technology Ultra low on-resistance 175 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free... | |
Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF Advanced process technology Ultra low on-resistance 150 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free... | |
Power MOSFET, Pulsed Drain Current 720 A, Input Capacitance 7600 pF Improved gate, avalanche and dynamic dV⁄dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV⁄dt and dI⁄dt... | |
Power MOSFET, Pulsed Drain Current 92 A, Input Capacitance 1770 pF Advanced process technology Ultra low on-resistance 175 °C operating temperature Fast switching Repetitive avalanche allowed up to Tjmax Lead-free... | |
Power MOSFET; 100V; TO-220 FullPak | |
Series N-Channel 75 V 0.0082 Ohm Power MOSFET Flange Mount - TO-220AB-3 | |
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an... | |
The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications. The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies... | |
The new IRFB4110 75V MOSFETs are designed to shrink circuit size and increase power density in high power server AC-DC switch-mode power supplies (SMPS) with 12V output or in 48V... | |
This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance... | |
TRANS MOSFET N-CH 100V 1.15A 3-PIN TO-236 T/R | |
TRANS MOSFET N-CH 100V 14A 3-PIN(3+TAB)TO-220AB | |
TRANS MOSFET N-CH 100V 9.2A 3-PIN (3+TAB) TO-220AB | |
TRANS MOSFET N-CH 20V 0.73A 3-PIN TO-236 T/R | |
TRANS MOSFET N-CH 60V 30A 3-PIN (3+TAB)TO-220AB | |
TRANS MOSFET N-CH 60V 50A 3-PIN (3+TAB)TO-220AB | |
TRANS MOSFET P-CH 40V 2.3A 3-PIN SOT-23T/R | |
TRANS MOSFET P-CH 60V 110A 3-PIN (2+TAB) TO-263 | |
TRANS MOSFET P-CH 80V 10.2A 8-PIN POWERPAK SO T/R |