NTE Electronics, Inc. TRANSISTOR PNP SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE269 NTE271

Description
Silicon Complementary Transistor Monolithic construction with built-in base-emitter shunt resistors The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Description
Silicon Complementary Transistor Monolithic construction with built-in base-emitter shunt resistors The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTOR PNP SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE269 - 70214628 - Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR PNP SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE269
70214628
TRANSISTOR PNP SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE269 70214628
Silicon Complementary Transistor Monolithic construction with built-in base-emitter shunt resistors The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Silicon Complementary Transistor

  • Monolithic construction with built-in base-emitter shunt resistors
    The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Supplier's Site
Darlington Transistor, Pnp, -100V To-218; Transistor Polarity Nte Electronics - 29C5291 - Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Pnp, -100V To-218; Transistor Polarity Nte Electronics
29C5291
Darlington Transistor, Pnp, -100V To-218; Transistor Polarity Nte Electronics 29C5291
DARLINGTON TRANSISTOR, PNP, -100V TO-218; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

DARLINGTON TRANSISTOR, PNP, -100V TO-218; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE271 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NTE271
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE271
TRANS PNP DARL 100V 10A TO3PN

TRANS PNP DARL 100V 10A TO3PN

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors
Product Number 70214628 29C5291 NTE271
Product Name TRANSISTOR PNP SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE269 Darlington Transistor, Pnp, -100V To-218; Transistor Polarity Nte Electronics Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-218 TO-3
IC(max) 10000 milliamps 10000 milliamps 10000 milliamps
VCEO 100 volts 100 volts 100 volts
VCBO 100 volts
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