3.0 A NPN Bipolar Power Transistor 80 V, TO-225, 500-BLKBX Product overview: MJE182G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.0 A, 80 V. Search-friendly keywords include transistor, BJT, switching, amplification, 3.0 A, 80 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE182G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 093710-MJE182G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.7V @ 600mA, 3A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 100mA, 1V
Maximum Power Dissipation: 1.5W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Audio, Industrial
Bipolar (BJT) Transistor NPN 80V 3A 50MHz 1.5W Through Hole TO-126
TRANSISTOR; NPN; 80; 100; 7; 3 COLLECTOR; 1 IB; 1.5W; 83.4C/W (MAX.); 1.7
POWER TRANSISTOR, NPN, 80V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHzRoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:3A; DC Current Gain hFE:12hFE; Transistor Case RoHS Compliant: Yes
TRANS NPN 80V 3A TO126
Bipolar Transistors - BJT 3A 80V 12.5W NPN
TRANS NPN 80V 3A TO126
80V 1.5W 50@100mA,1V 3A NPN TO-225-3 Bipolar Transistors - BJT ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Allied Electronics, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-MJE182G | 093710-MJE182G | MJE182GOS-ND | 70099518 | 26K4458 | 82Y6992 | MJE182G | MJE182G | MJE182G | MJE182G |
| Product Name | 3.0 A 80 V Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJE182G | Single Bipolar Transistors | TRANSISTOR; NPN; 80; 100; 7; 3 COLLECTOR; 1 IB; 1.5W; 83.4C/W (MAX.); 1.7 | Power Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Single Bipolar Transistors | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT |
| Polarity | NPN; NPN | NPN | NPN | NPN | NPN | NPN; NPN | NPN | |||
| Package Type | SOT3; TO-225AA | TO-225AA, TO-126-3 | TO-225AA | TO-3 | TO-3 | TO-225AA, TO-126-3 | ||||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | ||||||
| VCBO | 80 volts |
