Manufacturer: ON Semiconductor
Win Source Part Number: 093710-MJE182G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.7V @ 600mA, 3A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 100mA, 1V
Maximum Power Dissipation: 1.5W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Audio, Industrial
Bipolar (BJT) Transistor NPN 80V 3A 50MHz 1.5W Through Hole TO-126
3.0 A NPN Bipolar Power Transistor 80 V, TO-225, 500-BLKBX Product overview: MJE182G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.0 A, 80 V. Search-friendly keywords include transistor, BJT, switching, amplification, 3.0 A, 80 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE182G can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT 3A 80V 12.5W NPN
POWER TRANSISTOR, NPN, 80V, TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHzRoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:3A; DC Current Gain hFE:12hFE; Transistor Case RoHS Compliant: Yes
80V 1.5W 50@100mA,1V 3A NPN TO-225-3 Bipolar Transistors - BJT ROHS
TRANS NPN 80V 3A TO126
TRANS NPN 80V 3A TO126
TRANSISTOR; NPN; 80; 100; 7; 3 COLLECTOR; 1 IB; 1.5W; 83.4C/W (MAX.); 1.7
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 093710-MJE182G | MJE182GOS-ND | 276-MJE182G | MJE182G | 26K4458 | 82Y6992 | MJE182G | MJE182G | MJE182G | 70099518 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MJE182G | Single Bipolar Transistors | 3.0 A 80 V Bipolar Transistor | Bipolar Transistors - BJT | Power Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single Bipolar Transistors | TRANSISTOR; NPN; 80; 100; 7; 3 COLLECTOR; 1 IB; 1.5W; 83.4C/W (MAX.); 1.7 |
| Polarity | NPN; NPN | NPN | NPN | NPN | NPN | NPN; NPN | NPN | |||
| Package Type | SOT3; TO-225AA | TO-225AA, TO-126-3 | TO-3 | TO-3 | TO-225AA, TO-126-3 | TO-225AA | ||||
| Transistor Type | Power Transistor, Npn, 80V, To-225; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 80V, To-225-3; Transistor Polarity Onsemi | ||||||||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts |
