onsemi TRANSISTORS - Transistors (BJT) - Single - MJE13005G MJE13005G

Manufacturer: ON Semiconductor
Win Source Part Number: 1223690-MJE13005G
Series: SWITCHMODE
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-220-3
Power - Max: 2W
Transistor Type: NPN
Frequency - Transition: 4MHz
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-220AB
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 400V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 1A, 4A
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 8 @ 2A, 5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Application Field: Used in Audio, Signal Processing, Power Management

Bipolar (BJT) Transistor NPN 400V 4A 4MHz 2W Through Hole TO-220

4A 400V NPN BJT Power Transistor TO-220 Product overview: MJE13005G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 400V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 400V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE13005G can be used for catalog matching and distributor lookup.