NTE Electronics, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE252

Description
TRANS PNP DARL 100V 20A TO3
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE252 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2 - 70215983 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Description
TRANS PNP DARL 100V 20A TO3

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NTE252 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NTE252
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NTE252
TRANS PNP DARL 100V 20A TO3

TRANS PNP DARL 100V 20A TO3

Supplier's Site
TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2 - 70215983 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2
70215983
TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2 70215983
Silicon Complementaryyy Transistors, Darlington Power Amplifier Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min Monolithic construction with built-in base-emitter shunt resistors Designed for general-purpose amplifier and low-frequency switching applications.

Silicon Complementaryyy Transistors, Darlington Power Amplifier

  • Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min
  • Monolithic construction with built-in base-emitter shunt resistors
    Designed for general-purpose amplifier and low-frequency switching applications.
Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited Allied Electronics, Inc.
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number NTE252 70215983
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2
Packing Method Bag
IC(max) 20000 milliamps
VCEO 100 volts
Polarity PNP
Unlock Full Specs
to access all available technical data