Allied Electronics, Inc. Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| Features: TrenchFET® Power MOSFETs Maximum Junction Temperature: 175°C Rated | |
| -20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE | |
| -20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE | |
| -55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE | |
| 20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE | |
| 25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE | |
| 30V DUAL N-CHANNEL HEXFET POWER MOSFET IN A MICRO 8 PACKAGE | |
| 50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE | |
| 55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE | |
| 80V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE | |
| MOSFET, Dual, Complementary, 30V, 4.9/-3.9A, 2W, SO-8 | |
| MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363 | |
| MOSFET, Dual, N-Channel, 20V, 8.2A, 2W,SO-8 | |
| MOSFET, Dual, N-Channel, 60V, 6.5 A, 3.7 W, SO-8 | |
| MOSFET,Dual, Complementary, 30V, 2.5/1.8A, TSOP-6 | |
| N-CHANNEL 30-V (D-S) MOSFET | |
| Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 | |
| Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8 | |
| Pwr MOSFET, 55V Dual N-Ch. HEXFET; SO-8 |