Small-Signal Bipolar Transistors (BJT) Datasheets

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.
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Small-Signal Bipolar Transistors (BJT) Datasheets From:
Headquarters
Nexperia B.V.
Netherlands
Qorvo
United States
Richardson RFPD
United States
Rochester Electronics
United States
RS Components, Ltd.
United Kingdom
Win Source Electronics
United States
Allegro MicroSystems Inc.
United States
Infineon Technologies AG
Germany
LIXINC Electronics Co., Limited
China
Skyworks Solutions, Inc.
United States
TE Connectivity
United States
Texas Instruments
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
Linear Systems
United States
MACOM
Lowell, MA
PANJIT SemiConductor
Tempe, AZ
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Semicoa
Costa Mesa, CA
Shenzhen Shengyu Electronics Technology Limited
China
Toshiba America, Inc.
New York, NY
TT Semiconductor, Inc.
Anaheim, CA
Utmel Electronic Limited
China
ABLIC Inc.
United States
Advanced Semiconductor, Inc.
United States
Allied Electronics, Inc.
Fort Worth, TX
Amphenol Corporation
United States
Ampleon
United States
Assmann WSW Components, Inc.
United States
Bourns, Inc.
Riverside, CA
Broadcom Inc.
San Jose, CA
California Eastern Laboratories - CEL
Santa Clara, CA
Calogic, LLC
United States
Central Semiconductor Corp.
United States
Comchip Technology Corporation
United States
DIODES Incorporated
United States
Diotec Semiconductor
Germany
EDAC, Inc.
Canada
EVVO Semi
China
Foshan Blue Rocket Electronics Co.,Ltd.
China
Fuji Electric Global
Japan
Guangdong Fenghua Advanced Technology Group Co., Ltd.
China
HARTING Inc. of North America
Elgin, IL
Hitachi, Ltd.
Japan
Hitachi America, Ltd., Industrial Components and Equipment Division
United States
Inchange Semiconductor Company Limited
China
Inventus Power
United States
ITT Inc.
United States
ITT Cannon
United States
JCET Group
Milpitas, CA
JSMicro Semiconductor Co., Ltd.
China
KEC Corporation
Korea, South
Kodenshi Korea Corp.
Korea, South
Kycon, Inc.
United States
LAPIS Semiconductor
Japan
Leshan Radio Company, Ltd.
China
Leshan Radio Co., Ltd.
China
Micro Commercial Components Corp.
United States
Microchip Technology, Inc.
United States
Microsemi Corp.
United States
Mitsubishi Corporation
Japan
Mospec Semiconductor Corp.
Taiwan
Motorola Solutions, Inc.
United States
multicomp PRO
Chicago, IL
NEC Corporation
United States
Newark, An Avnet Company
United States
NorComp
United States
NTE Electronics, Inc.
United States
NXP Semiconductors
United States
onsemi
United States
Panasonic
Newark, NJ
Parallax, Inc.
United States
Plessey Semiconductors, Ltd.
United Kingdom
Rectron Semiconductor Inc.
United States
Renesas Electronics Corporation
Milpitas, CA
ROHM Co., Ltd.
Japan
Royal Philips Electronics
United States
Sanken Electric Co., Ltd.
Japan
Sanyo Denki America, Inc.
Torrance, CA
Sanyo Machine America
United States
Semelab Plc.
United Kingdom
Semtech Corp.
Camarillo, CA
Shenzhen Luguang Electronic Technology Co., Ltd.
China
Shindengen
Germany
Siemens AG
Germany
Solid State, Inc.
United States
STMicroelectronics, Inc.
United States
STMicroelectronics
Switzerland
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Teledyne Relays
United States
Toshiba Corporation
Japan
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
TT Electronics
United States
Unisonic Technologies Co., Ltd.
China
Vishay Intertechnology, Inc.
United States
WeEn Semiconductors
China
Yangzhou Yangjie Electronic Technology Co., Ltd.
China