Allied Electronics, Inc. Datasheets for EPROM

Erasable programmable read-only memory (EPROM) chips are programmable, reusable computer chips that can be erased using ultraviolet light and reprogrammed with a PROM programmer or PROM burner.
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Product Name Notes
The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory...
The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single...
1 Mbit UV and OTP EPROM, 5 V Supply Voltage, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature...
1 Mbit UV EPROM, 5 V Supply Voltage, FDIP32W Package, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature...
256 Kbit Memory UV EPROM, PDIP28 Package Type, -40 to +85°C Operating Temperature 100 μs⁄word Programming time It is ideally suited for microprocessor systems and is organized as 32,768 by...
EPROM OTP 512K PLCC32
EPROM, 1M 70NS OTP 32DIP
EPROM, 256K 70NS OTP 28DIP
EPROM, 2M (256K X 8), 5V, OTP 55NS, PDIP
EPROM, 4M 90NS OTP 32DIP
EPROM, 4M OTP 44PLCC
EPROM, 512K 70NS OTP 32PLCC
EPROM, 512K OTP 28DIP
IC EPROM 1M 70NS OTP 32PLCC
IC EPROM 256K 70NS OTP 32PLCC
IC EPROM 512K 70NS OTP 28DIP
IC EPROM 64KX16 70NS OTP 44PLCC
IC Eprom, 64K X 16, 70NS, OTP, 40DIP
INTEGRATED CIRCUIT 64K EPROM NMOS 200NS28-LEAD DIP UV ERASABLE
Integrated Circuit EPROM, 256 Kbit, - 40 to +125°C 5V ±10% supply voltage in read operation Low power “CMOS” consumption - Active Current 30mA at 5MHz Programming Time: 100μs⁄Word The...
Integrated Circuit UV EPROM, 64 Kbit, ± 10 μA (Max.) Leakage Input current, -40 to +125°C 5V ±10% supply voltage in read operation Low power “CMOS” consumption: - active current...