Allied Electronics, Inc. Datasheets for EPROM

Erasable programmable read-only memory (EPROM) chips are programmable, reusable computer chips that can be erased using ultraviolet light and reprogrammed with a PROM programmer or PROM burner.
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Product Name	Notes
INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE -- 70215995	The NTE2716 is a 16,384-bit (2048 × 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory...
INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE -- 70216016	The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single...
EPROM; 1 MBIT UV EPROM; 5V; 100; FDIP32W; 2 V (MIN.); -0.3 V (MAX.); 0; +70 -- 70013639 EPROM; 1 MBIT UV EPROM; 5V; 150; FDIP32W; 2 V (MIN.); -0.3 V (MAX.); 0; +70 -- 70014181	1 Mbit UV and OTP EPROM, 5 V Supply Voltage, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature...
EPROM; 1 MBIT UV EPROM; 5V; 120; FDIP32W; 2 V (MIN.); -0.3 V (MIN.); -40; +85 -- 70013638	1 Mbit UV EPROM, 5 V Supply Voltage, FDIP32W Package, 11.5 V (Min.) Program Voltage Access time is 35 ns Low power consumption Programming time is 100 μs⁄word Electronic signature...
EPROM; 256 KB UV EPROM; 5V; 100; FDIP28W; 2 V (MIN.); 0.8 V (TYP.); 100 STANDBY -- 70013635 EPROM; 256 KB UV EPROM; 5V; 120; FDIP28W; 2 V (MIN.); 0.8 V (TYP.); 100 STANDBY -- 70014160 EPROM; 256 KB UV EPROM; 5V; 150; FDIP28W; 2 V (MIN.); 0.8 V (TYP.); 100 STANDBY -- 70014184	256 Kbit Memory UV EPROM, PDIP28 Package Type, -40 to +85°C Operating Temperature 100 μs⁄word Programming time It is ideally suited for microprocessor systems and is organized as 32,768 by...
EPROM OTP 512K PLCC32 -- 70013724	EPROM OTP 512K PLCC32
EPROM, 1M 70NS OTP 32DIP -- 70123824	EPROM, 1M 70NS OTP 32DIP
EPROM, 256K 70NS OTP 28DIP -- 70123835	EPROM, 256K 70NS OTP 28DIP
EPROM, 2M (256K X 8), 5V, OTP 55NS, PDIP -- 70123825	EPROM, 2M (256K X 8), 5V, OTP 55NS, PDIP
EPROM, 4M 90NS OTP 32DIP -- 70123829	EPROM, 4M 90NS OTP 32DIP
EPROM, 4M OTP 44PLCC -- 70123836	EPROM, 4M OTP 44PLCC
EPROM, 512K 70NS OTP 32PLCC -- 70123841	EPROM, 512K 70NS OTP 32PLCC
EPROM, 512K OTP 28DIP -- 70123840	EPROM, 512K OTP 28DIP
IC EPROM 1M 70NS OTP 32PLCC -- 70123744	IC EPROM 1M 70NS OTP 32PLCC
IC EPROM 256K 70NS OTP 32PLCC -- 70123746	IC EPROM 256K 70NS OTP 32PLCC
IC EPROM 512K 70NS OTP 28DIP -- 70123747	IC EPROM 512K 70NS OTP 28DIP
IC EPROM 64KX16 70NS OTP 44PLCC -- 70123745	IC EPROM 64KX16 70NS OTP 44PLCC
IC Eprom, 64K X 16, 70NS, OTP, 40DIP -- 70123754	IC Eprom, 64K X 16, 70NS, OTP, 40DIP
INTEGRATED CIRCUIT 64K EPROM NMOS 200NS28-LEAD DIP UV ERASABLE -- 70216015	INTEGRATED CIRCUIT 64K EPROM NMOS 200NS28-LEAD DIP UV ERASABLE
EPROM 256KB(32K X 8)150NS -- 70214651	Integrated Circuit EPROM, 256 Kbit, - 40 to +125°C 5V ±10% supply voltage in read operation Low power “CMOS” consumption - Active Current 30mA at 5MHz Programming Time: 100μs⁄Word The...
EPROM 64KB(8K X 8)150NS -- 70214652	Integrated Circuit UV EPROM, 64 Kbit, ± 10 μA (Max.) Leakage Input current, -40 to +125°C 5V ±10% supply voltage in read operation Low power “CMOS” consumption: - active current...

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