Rochester Electronics Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 15A, 60V, 0.085ohm, N-Channel Power MOSFET, TO-220AB | |
| 15A, 60V, 0.085ohm, N-Channel Power MOSFET | |
| 15A, 60V, 0.12ohm, N-Channel Power MOSFET | |
| 2.5A, 20V, 0.25ohm, P-Channel Power MOSFET | |
| 3A, 600V, 2ohm, N-Channel Power MOSFET, TO-220AB | |
| 4.6A, 30V, 0.07ohm, P-Channel Power MOSFET | |
| 4A, 200V, 1.2ohm, N-Channel Power MOSFET | |
| 6A, 600V, 1.2ohm, N-Channel Power MOSFET | |
| AND Gate Based MOSFET Driver, PDSO6 | |
| Buffer/Inverter Based MOSFET Driver, 0.25A, CMOS, PDIP8 | |
| Buffer/Inverter Based MOSFET Driver, 2A, PDSO8 | |
| Buffer/Inverter Based MOSFET Driver, 3A, CMOS, PDIP8 | |
| Buffer/Inverter Based MOSFET Driver, 3A, CMOS, PDSO8 | |
| Buffer/Inverter Based MOSFET Driver, 3A, PDIP16 | |
| Buffer/Inverter Based MOSFET Driver, 3A, PDSO16 | |
| Buffer/Inverter Based MOSFET Driver, 5A, PDSO8 | |
| Buffer/Inverter Based MOSFET Driver, 6A, CMOS, PDIP8 | |
| Buffer/Inverter Based MOSFET Driver, 6A, CMOS, PDSO8 | |
| Buffer/Inverter Based MOSFET Driver, 9A, CMOS, PDIP8 | |
| Buffer/Inverter Based MOSFET Driver, 9A, CMOS, PSFM5 | |
| Buffer/Inverter Based MOSFET Driver, PBGA4 | |
| Buffer/Inverter Based MOSFET Driver, PBGA6 | |
| Buffer/Inverter Based MOSFET Driver, PDSO8 | |
| Buffer/Inverter Based MOSFET Driver | |
| Complementary Bipolar Digital Transistor (BRT) | |
| Dual N & P Channel Enhancement Mode Field Effect Transistor 60V | |
| Dual NPN Bipolar Digital Transistor (BRT) | |
| Dual PNP Bipolar Digital Transistor (BRT) | |
| Half Bridge Based IGBT/MOSFET Driver | |
| Half Bridge Based MOSFET Driver, 0.5A, CMOS, PDIP14 | |
| Half Bridge Based MOSFET Driver, 20A | |
| Half Bridge Based MOSFET Driver, PDSO8 | |
| Half Bridge Based MOSFET Driver | |
| High Voltage NPN Bipolar Transistor | |
| IGBT 1200V 15A FS1 Induction Heating | |
| IGBT Gate Drivers, High-Current, Stand-Alone, Non-inverting | |
| IGBT, /w Diode 600V 15A NPT | |
| IGBT, 1200 V, 25 A, FS1 Solar/UPS | |
| IGBT, 1200V 30A FS2 Low VCEsat | |
| IGBT, 600V 50A FS2 Low VCEsat | |
| IGBT | |
| Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel | |
| Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel | |
| Integrated Driver and MOSFET with Integrated Current Monitor | |
| Integrated Driver and MOSFET | |
| MOSFET Driver, PDSO8 | |
| MOSFET Driver | |
| MOSFET DVR HI/LOW SIDE QFN | |
| MOSFET N-CH 600V 7.1A TO-220FP | |
| MPS751 - Silicon PNP Transistor | |
| MPSA29 - NPN Bipolar Junction Darlington Transistor | |
| MRF085H - Wideband RF Power LDMOS Transistor, 85W | |
| MRF1K50 - RF Power LDMOS Transistor | |
| MRF24300 - RF Power LDMOS Transistor | |
| MRF24301 - RF Power LDMOS Transistor, 2450 MHz, 300 W CW, 32 V | |
| MRF24G300 - RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | |
| MRF6V13250HS - Lateral N-Channel RF Power MOSFET | |
| MRF6V14300 - RF N-Channel, MOSFET | |
| MRF8P9040 - CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V | |
| MRF8P9210 - Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V | |
| MRF8S9200 - Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V | |
| MRF8S9232 - Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 63 W Avg., 28 V | |
| MRF8VP13350GN - RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V | |
| MRFE6VP6600GN - Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V | |
| MUN5234 - NPN Bipolar Digital Transistor (BRT) | |
| MUN5234DW1 - Dual NPN Bipolar Digital Transistor (BRT) | |
| MUN5338DW - 4.7kOhm, 10kOhm Complementary Bias Resistor Transistors Consumer/Industrial Qualified | |
| MX0912B351Y - NPN Silicon RF Power Transistor | |
| N-Channel Mos Field Effect Transistor For Switching | |
| NCD5701 - Buffer/Inverter Based MOSFET Driver | |
| NCD57085 - Isolated Compact IGBT Gate Driver with Current Sense | |
| NCD57252 - Isolated Dual-Channel IGBT Gate Driver Dual-Channel Iso IGBT Gate Driver in SOIC-16 Narrow | |
| NCD57540 - Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance | |
| NCP302045 - Integrated Driver and MOSFET | |
| NCP302155 - Half Bridge Based MOSFET Driver | |
| NCP302155 - Integrated Driver and MOSFET | |
| NCP51530 - High Performance, 700 V- 3.5/3.0 A High and Low Side MOSFET Driver High Frequency, 700 V- 2 A High and Low Side Driver | |
| NCP81071 - Buffer/Inverter Based MOSFET Driver, PDSO8 | |
| NCP81071 - Dual 5 Low -Side Driver MOSFET | |
| NCP81078 - High Performance Dual MOSFET Gate Driver | |
| NCP81151 - Dual N-Channel MOSFET Gate Driver | |
| NCP81253 - SYNCHRONOUS BUCK MOSFET D | |
| NCV5701 - IGBT Gate Drivers, High-Current, Stand-Alone | |
| NCV5703 - IGBT Gate Drivers, High-Current, Stand-Alone | |
| NDS0610 - Small Signal Field-Effect Transistor | |
| NDS355AN - Small Signal Field-Effect Transistor, 1.7A, 30V, N-Channel, MOSFET | |
| NE3505M04 Transistor | |
| NE5550979 - RF Power Field-Effect Transistor, N-Channel MOSFET, N-Channel MOSFET | |
| NHDTA114ET - 80 V, 100 mA PNP resistor-equipped transistors | |
| NPN Bipolar Digital Transistor (BRT) | |
| NPN Bipolar Transistor | |
| NPN microwave power transistor | |
| P-Channel Enhancement Mode Field Effect Transistor | |
| PNP Bipolar Digital Transistor (BRT) | |
| PNP Bipolar Small Signal Transistor | |
| PNP Bipolar Transistor | |
| Power Field-Effect Transistor, 2.6A I(D), 52V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | |
| Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, N-Channel, MOSFET | |
| Power Field-Effect Transistor | |
| Power MOSFET 500V 10.5A 0.52 Ohm Single N-Channel TO-220FP Optimized | |
| Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | |
| RF L Band, N-Channel Power MOSFET, TO-272 | |
| RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, S Band, N-Channel MOSFET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, MOSFET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2.62Ghz, NI-780, MOSFET | |
| RF Power Field-Effect Transistor, N-Channel Enhancement Mode Lateral MOSFET | |
| RF Power Field-Effect Transistor, N-Channel MOSFET | |
| RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor | |
| RF S Band, N-Channel Power MOSFET | |
| RF Small Signal Bipolar Transistor, 0.03A, NPN | |
| RF Small Signal Bipolar Transistor, 0.2A, NPN | |
| RF Small Signal Bipolar Transistor, 0.4A, NPN | |
| RF Small Signal Bipolar Transistor, 1-Element, NPN | |
| RF Small Signal Bipolar Transistor | |
| RF Small Signal Field-Effect Transistor, 1-Elemen | |
| RF Small Signal Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | |
| RF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET | |
| RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | |
| RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET | |
| RF Small Signal Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel JFET | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-270 | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-272 | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET | |
| Signal Transistors | |
| Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg, 28 V | |
| Small Signal Bipolar Transistor, 0.03A, 20V, NPN | |
| Small Signal Bipolar Transistor, 0.15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.15A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A, 40V, PNP, TO-92 | |
| Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP | |
| Small Signal Bipolar Transistor, 0.1A, 50V, NPN | |
| Small Signal Bipolar Transistor, 0.1A, NPN, TO-92 | |
| Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
| Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
| Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
| Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
| Small Signal Bipolar Transistor | |
| Small Signal Field-Effect Transistor, 1.7A, 20V, N-Channel MOSFET | |
| Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | |
| Small Signal Field-Effect Transistor, 4.1A, 20V, N-Channel MOSFET | |
| Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Small Signal Field-Effect Transistor, N-Channel MOSFET | |
| Small Signal Field-Effect Transistor | |
| SYNCHRONOUS BUCK MOSFET D | |
| Trans MOSFET N-CH 250V 3A 3-Pin(2+Tab) DPAK | |
| TRANSISTOR (SILICON) | |
| Transistor Output Slotted Switch, 1-Channel, 5.08mm Slot Width | |
| Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | |
| Wideband RF Power LDMOS Transistor |
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