The MRF6V3090NR1 is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadcast and commercial aerospace broadband applications from 470 to 1215 MHz. It is packaged in a TO-270WB-4 plastic case with an exposed source terminal on the backside. The device supports operation up to 50 V drain-source voltage and is capable of 90 W CW output power at 860 MHz with a 10:1 VSWR tolerance. It features internal input matching, integrated ESD protection, and thermal stability. The transistor meets ESD protection standards per JESD22-A114 (Class 2), EIA/JESD22-A115 (Class B), and JESD22-C101 (Class IV), and is rated for moisture sensitivity level 3 per J-STD-020. It is characterized for DVB-T (8kOFDM) modulation and pulse applications with a maximum junction temperature of 225°C and thermal resistance from junction to case of 0.82°C/W under typical operating conditions.
Manufacturer: Freescale Semiconductor - NXP
Win Source Part Number: 928080-MRF6V3090NR1
Features: RF Mosfet LDMOS 50 V 350 mA 860MHz 22dB 18W TO-270 WB-4
Package: Bulk
Package: TO-270AB
Categories: Discrete Semiconductor Products
Case / Package: TO-270 WB-4
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 928080-MRF6V3090NR1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF6V3090NR1 |
| Package Type | SOT3; TO-270 WB-4 |
