onsemi 20 A 1.5 V 165 W IGBT Transistor NGB8207BNT4G

Description
Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel
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Description
Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NGB8207BNT4G - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel

Supplier's Site Datasheet
Singapore
20 A 1.5 V 165 W IGBT Transistor
279-NGB8207BNT4G
20 A 1.5 V 165 W IGBT Transistor 279-NGB8207BNT4G
ON SEMICONDUCTOR NGB8207BNT4G IGBT Single Transistor, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 Pins Product overview: NGB8207BNT4G from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 1.5 V, 165 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 1.5 V, 165 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8207BNT4G can be used for catalog matching and distributor lookup.

ON SEMICONDUCTOR NGB8207BNT4G IGBT Single Transistor, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 Pins Product overview: NGB8207BNT4G from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 1.5 V, 165 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 1.5 V, 165 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8207BNT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGB8207BNT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGB8207BNT4G
Discrete Semiconductor Products - Transistors - IGBTs NGB8207BNT4G
INSULATED GATE BIPOLAR TRANSISTO

INSULATED GATE BIPOLAR TRANSISTO

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number NGB8207BNT4G 279-NGB8207BNT4G NGB8207BNT4G
Product Name 20 A 1.5 V 165 W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-263; TO-263-3, D2PAK
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