Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel
ON SEMICONDUCTOR NGB8207BNT4G IGBT Single Transistor, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 Pins Product overview: NGB8207BNT4G from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 1.5 V, 165 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 20 A, 1.5 V, 165 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8207BNT4G can be used for catalog matching and distributor lookup.
INSULATED GATE BIPOLAR TRANSISTO
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGB8207BNT4G | 279-NGB8207BNT4G | NGB8207BNT4G |
| Product Name | 20 A 1.5 V 165 W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | TO-263; TO-263-3, D2PAK |
