Rochester Electronics TRANSISTORS - RF Transistors (BJT) - NESG2021M16-T3-A NESG2021M16-T3-A

The NESG2021M16-T3-A is an NPN silicon germanium RF transistor for low noise, high-gain amplification, packaged in a 6-pin lead-less minimold (M16, 1208 pkg). It has a maximum collector-to-emitter voltage of 5.0 V and a collector current rating of 35 mA, with a total power dissipation of 175 mW when mounted on a 1.08 cm² × 1.0 mm glass epoxy PCB. At 2 GHz and VCE = 2 V, IC = 3 mA, it achieves a typical noise figure of 0.9 dB and a power gain of 18.0 dB. At 5.2 GHz, the typical noise figure is 1.3 dB with 10.0 dB gain. The device is supplied on 10 kpcs/reel in 8 mm wide embossed taping, with pin 1 (collector) and pin 6 (emitter) facing the perforation side. It is classified as 'Standard' quality grade.