Ampleon Bipolar RF Transistors MX0912B351Y

Description
MX0912B351Y - NPN Silicon RF Power Transistor
Request a Quote Datasheet
Description
MX0912B351Y - NPN Silicon RF Power Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MX0912B351Y - Rochester Electronics
Newburyport, MA, United States
MX0912B351Y - NPN Silicon RF Power Transistor

MX0912B351Y - NPN Silicon RF Power Transistor

Supplier's Site Datasheet
Bipolar RF Transistors - MX0912B351Y - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MX0912B351Y
Bipolar RF Transistors MX0912B351Y
RF POWER BIPOLAR TRANSISTOR, 1-E

RF POWER BIPOLAR TRANSISTOR, 1-E

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MX0912B351Y - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MX0912B351Y
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MX0912B351Y
RF POWER BIPOLAR TRANSISTOR, 1-E

RF POWER BIPOLAR TRANSISTOR, 1-E

Supplier's Site

Technical Specifications

  Rochester Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Bipolar RF Transistors Bipolar RF Transistors
Product Number MX0912B351Y MX0912B351Y MX0912B351Y
Product Name Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT439A SOT-439A
Packing Method Bulk; Bulk Bulk; Bulk
Polarity NPN; NPN
IC(max) 21000 milliamps
VCEO 20 volts 20 volts
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