RF POWER BIPOLAR TRANSISTOR, 1-E
MX0912B351Y - NPN Silicon RF Power Transistor
RF POWER BIPOLAR TRANSISTOR, 1-E
| ODG (Origin Data Global) | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Power MOSFET | Bipolar RF Transistors |
| Product Number | MX0912B351Y | MX0912B351Y | MX0912B351Y |
| Product Name | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN; NPN | ||
| Package Type | SOT-439A | SOT439A | |
| IC(max) | 21000 milliamps | ||
| VCEO | 20 volts | 20 volts | |
| Power Gain | 8 dB |
