Ampleon Discrete Semiconductor Products - Transistors - Bipolar (BJT) MX0912B351Y

Description
MX0912B351Y - NPN Silicon RF Power Transistor
Request a Quote Datasheet
Description
MX0912B351Y - NPN Silicon RF Power Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - MX0912B351Y - Rochester Electronics
Newburyport, MA, United States
MX0912B351Y - NPN Silicon RF Power Transistor

MX0912B351Y - NPN Silicon RF Power Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MX0912B351Y - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MX0912B351Y
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MX0912B351Y
RF POWER BIPOLAR TRANSISTOR, 1-E

RF POWER BIPOLAR TRANSISTOR, 1-E

Supplier's Site
Bipolar RF Transistors - MX0912B351Y - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MX0912B351Y
Bipolar RF Transistors MX0912B351Y
RF POWER BIPOLAR TRANSISTOR, 1-E

RF POWER BIPOLAR TRANSISTOR, 1-E

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Power MOSFET Bipolar RF Transistors Bipolar RF Transistors
Product Number MX0912B351Y MX0912B351Y MX0912B351Y
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Package Type SOT439A SOT-439A
Packing Method Bulk; Bulk Bulk; Bulk
VCEO 20 volts 20 volts
Output Power 960 watts 960 watts
Polarity NPN; NPN
Unlock Full Specs
to access all available technical data